Weak Van der Waals Stacking, Wide-Range Band Gap, and Raman Study on Ultrathin Layers of Metal Phosphorus Trichalcogenides

ACS Nano

Volumn 10, Issue 2, 2016, Pages 1738-1743

  Du, Ke Zhao ^a,b   Wang, Xing Zhi ^b   Liu, Yang ^b   Hu, Peng ^a   Utama, M Iqbal Bakti ^b   Gan, Chee Kwan ^d   Xiong, Qihua ^b,c   Kloc, Christian ^a  

^a NANYANG TECHNOLOGICAL UNIVERSITY   (Singapore)

^b NANYANG TECHNOLOGICAL UNIVERSITY   (Singapore)

^c NANYANG TECHNOLOGICAL UNIVERSITY   (Singapore)

^d INSTITUTE OF HIGH PERFORMANCE COMPUTING   (Singapore)

Author keywords

band gap; cleavage energy; metal phosphorus trichalcogenides; Raman spectroscopy; two dimensional semiconductors

Indexed keywords

CADMIUM; FERROELECTRIC MATERIALS; MANGANESE; MONOLAYERS; PHOSPHORUS; RAMAN SPECTROSCOPY; SELENIUM COMPOUNDS; STABILITY; VAN DER WAALS FORCES; ZINC SULFIDE;

AMBIENT CONDITIONS; BULK CRYSTALS; CLEAVAGE ENERGY; OPTOELECTRONIC APPLICATIONS; STRUCTURAL STABILITIES; TWO-DIMENSIONAL SEMICONDUCTORS; ULTRATHIN LAYERS; WAVELENGTH RANGES;

ENERGY GAP;

EID: 84960194540     PISSN: 19360851     EISSN: 1936086X     Source Type: Journal    
DOI: 10.1021/acsnano.5b05927     Document Type: Article

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