Effect of Nickel Vacancies on the Room-Temperature NO2 Sensing Properties of Mesoporous NiO Nanosheets

Journal of Physical Chemistry C

Volumn 120, Issue 7, 2016, Pages 3936-3945

  Zhang, Jian ^a,b   Zeng, Dawen ^a,b   Zhu, Qiang ^a   Wu, Jinjin ^a   Huang, Qingwu ^a   Xie, Changsheng ^a  

^a HUAZHONG UNIVERSITY OF SCIENCE AND TECHNOLOGY   (China)

^b HUBEI UNIVERSITY   (China)

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALING; CHEMICAL DETECTION; GAS DETECTORS; GAS SENSING ELECTRODES; GASES; IONIZATION OF GASES; METAL ANALYSIS; METALS; MOS DEVICES; NANOSHEETS; NITROGEN OXIDES; OXIDE SEMICONDUCTORS; POSITIVE IONS; TEMPERATURE SENSORS;

ANNEALING TEMPERATURES; GAS SENSING PROPERTIES; GAS-SOLID REACTION; HOLE CONDUCTION; METAL OXIDE SEMICONDUCTOR; P TYPE SEMICONDUCTOR; ROOM TEMPERATURE SENSING; SENSING PROPERTY;

NICKEL;

EID: 84959316684     PISSN: 19327447     EISSN: 19327455     Source Type: Journal    
DOI: 10.1021/acs.jpcc.5b12162     Document Type: Article

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