Hydrogen passivation of silicon nanowire structures

Applied Surface Science

Volumn 370, Issue , 2016, Pages 49-52

  Aouida, S ^a   Benabderrahmane Zaghouani, R ^a   Bachtouli, N ^a   Bessais, B ^a  

^a RESEARCH AND TECHNOLOGY CENTER OF ENERGY   (Tunisia)

Author keywords

Minority carrier lifetime; Passivation; Silicon nanowire structures; Surface defects

Indexed keywords

CARRIER LIFETIME; DANGLING BONDS; HYDROGEN; HYDROGEN BONDS; NANOWIRES; SILICON; SOLAR POWER GENERATION; SURFACE DEFECTS;

HYDROGEN PASSIVATION; HYDROGEN PASSIVATION OF SILICON; METAL-ASSISTED CHEMICAL ETCHING; MINORITY CARRIER LIFETIMES; SILICON NANOWIRES; SILICON-BASED; SURFACE RECOMBINATION VELOCITIES;

PASSIVATION;

EID: 84959128245     PISSN: 01694332     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.apsusc.2016.02.116     Document Type: Article

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