Development of an empirical large signal model for SiC MESFETs

59th ARFTG Conference Digest Spring 2002: Test, Measurement, and Characterization of High Speed Digital Components and Systems, ARFTG Spring 2002

Volumn , Issue , 2002, Pages 23-29

  Manohar, S ^a   Pham, A ^a   Evers, N ^b  

^a Clemson University   (United States)

^b GE GLOBAL RESEARCH   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CURRENT VOLTAGE CHARACTERISTICS; MESFET DEVICES; NONLINEAR SYSTEMS; SCATTERING PARAMETERS; SILICON CARBIDE;

CHANNEL CURRENT MODELS; COMPUTER AIDED DESIGN TOOLS; CONTINUOUSLY DIFFERENTIABLE; I - V CURVE; LARGE SIGNAL MODELING; LOAD PULL; MESFETS; NON-LINEAR MODEL;

COMPUTER AIDED DESIGN;

EID: 84956864021     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/ARFTGS.2002.1214676     Document Type: Conference Paper

References (13)

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