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IEEE MTT-S International Microwave Symposium Digest

Volumn 2, Issue , 2000, Pages 761-764

Validation of an analytical large signal model for AlGaN/GaN HEMTs

(8) Green, Bruce M a Kim, Hyungtak a Chu, Kenneth K a Lin, Hong S a Tilak, Vinayak a Shealy, James R a Smart, Joseph A a Eastman, Lester F a

a Cornell University (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ANALYTICAL LARGE SIGNAL MODEL; CAPACITANCE VOLTAGE BEHAVIOR;

COMPUTER SIMULATION; CURRENT VOLTAGE CHARACTERISTICS; SAPPHIRE; SCATTERING PARAMETERS; SEMICONDUCTING ALUMINUM COMPOUNDS; SEMICONDUCTING GALLIUM COMPOUNDS; TRANSCONDUCTANCE;

HIGH ELECTRON MOBILITY TRANSISTORS;

EID: 0033678492 PISSN: 0149645X EISSN: None Source Type: Journal
DOI: 10.1109/MWSYM.2000.863293 Document Type: Article

Times cited : (12)

References (7)

1
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- High Al-content AlGaN/GaN HEMTs on SiC substrates with very high power performance
- Washington D.C., Dec
- Y.-F. Wu, D. Kapolnek, J. Ibbetson, N.-Q. Zhang, P. Parikh, B.P. Keller, and U.K. Mishra. High Al-content AlGaN/GaN HEMTs on SiC substrates with very high power performance. In IEDM Digest? pages 925-927. Washington D.C., Dec. 1999.
- (1999) IEDM Digest? , pp. 925-927
- Wu, Y.-F.¹ Kapolnek, D.² Ibbetson, J.³ Zhang, N.-Q.⁴ Parikh, P.⁵ Keller, B.P.⁶ Mishra, U.K.⁷

2
- 0001737390
- A nonlinear GaAs FET model for use in the design of output circuits for power amplifiers
- Dec
- W.R. Curtice and M. Ettenberg. A Nonlinear GaAs FET Model for Use in the Design of Output Circuits for Power Amplifiers. IEEE Trans. Microwave Theory Tech., MTT-33:1383-1394, Dec. 1985.
- (1985) IEEE Trans. Microwave Theory Tech. , vol.MTT-33 , pp. 1383-1394
- Curtice, W.R.¹ Ettenberg, M.²

3
- 79952617236
- The role of surface passivation on the microwave characteristics of AlGaN/GaN HEMTs
- submitted for publication
- B.M. Green, K.K. Chu, E.M. Chumbes, J.A. Smart, J.R. Shealy, and L.F. Eastman. The Role of Surface Passivation on the microwave characteristics of AlGaN/GaN HEMTs. IEEE Electron Device Lett., 1999. submitted for publication.
- (1999) IEEE Electron Device Lett.
- Green, B.M.¹ Chu, K.K.² Chumbes, E.M.³ Smart, J.A.⁴ Shealy, J.R.⁵ Eastman, L.F.⁶

4
- 79952617154
- Undoped SiC HEMTs
- Submitted for publication
- K.K. Chu, E.M. Chumbes, J.A. Smart, B.M. Green, J.R. Shealy, and L.F. Eastman. Undoped SiC HEMTs. IEEE Electron Device Lett. Submitted for publication, 1999.
- (1999) IEEE Electron Device Lett.
- Chu, K.K.¹ Chumbes, E.M.² Smart, J.A.³ Green, B.M.⁴ Shealy, J.R.⁵ Eastman, L.F.⁶

5
- 0032620168
- AlGaN/GaN heterostructures on insulating AlGaN nuclcation layers
- 19 July
- J.A. Smart, A.T. Schremer, N.G. Weimann, O. Am-bacher, L.F. Eastman, and J.R. Shealy. AlGaN/GaN heterostructures on insulating AlGaN nuclcation layers. Appl. Phys. Lett, 75(3):388-390, 19 July 1999.
- (1999) Appl. Phys. Lett , vol.75 , Issue.3 , pp. 388-390
- Smart, J.A.¹ Schremer, A.T.² Weimann, N.G.³ Am-Bacher, O.⁴ Eastman, L.F.⁵ Shealy, J.R.⁶

6
- 0031146219
- Low-frequency transconductance dispersion in InAlAs/InGaAs/InP HEMT's with single and double-recessed gate structures
- W.K. Kruppa and J.B. Boos. Low-Frequency Transconductance Dispersion in InAlAs/InGaAs/InP HEMT's with Single and Double-Recessed Gate Structures. IEEE Trans. Electron Devices, 1997.
- (1997) IEEE Trans. Electron Devices
- Kruppa, W.K.¹ Boos, J.B.²

7
- 0013440997
- W.R. Curtice Consulting
- W.R. Curtice. CFET User's Manual. W.R. Curtice Consulting, 1998.
- (1998) CFET User's Manual
- Curtice, W.R.¹

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