Ultrahigh power factor and thermoelectric performance in hole-doped single-crystal SnSe

Science

Volumn 351, Issue 6269, 2016, Pages 141-144

  Zhao, Li Dong ^a,b   Tan, Gangjian ^b   Hao, Shiqiang ^c   He, Jiaqing ^d   Pei, Yanling ^a   Chi, Hang ^e   Wang, Heng ^f   Gong, Shengkai ^a   Xu, Huibin ^a   Dravid, Vinayak P ^c   Uher, Ctirad ^e   Snyder, G Jeffrey ^c   Wolverton, Chris ^c   Kanatzidis, Mercouri G ^b  

^a BEIHANG UNIVERSITY   (China)

^b NORTHWESTERN UNIVERSITY   (United States)

^c Northwestern University   (United States)

^d SOUTHERN UNIVERSITY OF SCIENCE AND TECHNOLOGY   (China)

^e UNIVERSITY OF MICHIGAN   (United States)

^f California Institute of Technology   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

SELENIDE; TIN; TIN SELENIDE; UNCLASSIFIED DRUG;

CRYSTAL STRUCTURE; ELECTRICAL CONDUCTIVITY; ELECTRICAL METHOD; ENERGY EFFICIENCY; INORGANIC COMPOUND; OPTIMIZATION; PERFORMANCE ASSESSMENT; POWER GENERATION; TEMPERATURE GRADIENT; THERMAL POWER;

ARTICLE; ATMOSPHERE; CRYSTAL STRUCTURE; DENSITY FUNCTIONAL THEORY; ELECTRIC CONDUCTIVITY; ENERGY CONSERVATION; ENERGY CONVERSION; HEAT; HIGH TEMPERATURE; NEUTRON SCATTERING; PRIORITY JOURNAL; ROOM TEMPERATURE; SEMICONDUCTOR; STOICHIOMETRY; TEMPERATURE; THERMAL CONDUCTIVITY; THERMOELECTRIC TECHNOLOGY;

EID: 84955602314     PISSN: 00368075     EISSN: 10959203     Source Type: Journal    
DOI: 10.1126/science.aad3749     Document Type: Article

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