Dense dislocation arrays embedded in grain boundaries for high-performance bulk thermoelectrics

Science

Volumn 348, Issue 6230, 2015, Pages 109-114

  Kim, Sang Il ^a   Lee, Kyu Hyoung ^b   Mun, Hyeon A ^c   Kim, Hyun Sik ^a,d   Hwang, Sung Woo ^a   Roh, Jong Wook ^a   Yang, Dae Jin ^a   Shin, Weon Ho ^a   Li, Xiang Shu ^a   Lee, Young Hee ^c   Snyder, G Jeffrey ^c,d   Kim, Sung Wng ^c  

^a SAMSUNG Electronics   (South Korea)

^b Kangwon National University   (South Korea)

^c Sungkyunkwan University   (South Korea)

^d California Institute of Technology   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ALLOY; ANTIMONY; BISMUTH; BISMUTH ANTIMONY TELLURIDE; TELLURIUM DERIVATIVE; UNCLASSIFIED DRUG;

ALLOY; COOLING; ELECTRICITY; SCATTERING; THERMAL CONDUCTIVITY;

ARTICLE; ELECTRIC CONDUCTIVITY; ELECTRONICS; HEAT TRANSFER; PARTICLE SIZE; PHONON; PRIORITY JOURNAL; TEMPERATURE; TEMPERATURE DEPENDENCE; THERMAL CONDUCTIVITY; THERMOELECTRICS; TRANSMISSION ELECTRON MICROSCOPY;

EID: 84929330957     PISSN: 00368075     EISSN: 10959203     Source Type: Journal    
DOI: 10.1126/science.aaa4166     Document Type: Article

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