Convergence of conduction bands as a means of enhancing thermoelectric performance of n-type Mg 2Si 1-xSn x solid solutions

Physical Review Letters

Volumn 108, Issue 16, 2012, Pages

  Liu, Wei ^a   Tan, Xiaojian ^b   Yin, Kang ^a   Liu, Huijun ^b   Tang, Xinfeng ^a   Shi, Jing ^b   Zhang, Qingjie ^a   Uher, Ctirad ^c  

^a Wuhan University of Technology   (China)

^b WUHAN UNIVERSITY   (China)

^c UNIVERSITY OF MICHIGAN   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

BAND EDGE; COMPOSITIONAL VARIATION; CROSS OVER; DENSITY-OF-STATES; EFFECTIVE MASS; FIRST-PRINCIPLES CALCULATION; INDIRECT BAND GAP; LOW-TEMPERATURE SPECIFIC HEAT; THERMOELECTRIC FIGURE OF MERIT; THERMOELECTRIC MATERIAL; THERMOELECTRIC PERFORMANCE; THERMOELECTRIC PROPERTIES; TRANSPORT MEASUREMENTS;

CONDUCTION BANDS; SEEBECK COEFFICIENT; SILICON; SOLID SOLUTIONS; THERMOELECTRIC EQUIPMENT; THERMOELECTRICITY;

TIN;

EID: 84860139423     PISSN: 00319007     EISSN: 10797114     Source Type: Journal    
DOI: 10.1103/PhysRevLett.108.166601     Document Type: Article

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