Lattice Strain Induced Remarkable Enhancement in Piezoelectric Performance of ZnO-Based Flexible Nanogenerators

ACS Applied Materials and Interfaces

Volumn 8, Issue 2, 2016, Pages 1381-1387

  Zhang, Yang ^a   Liu, Caihong ^a   Liu, Jingbin ^c   Xiong, Jie ^c   Liu, Jingyu ^a   Zhang, Ke ^a   Liu, Yudong ^a   Peng, Mingzeng ^a   Yu, Aifang ^a   Zhang, Aihua ^a   Zhang, Yan ^a   Wang, Zhiwei ^a   Zhai, Junyi ^a   Wang, Zhong Lin ^a,b  

^a INSTITUTE OF GEOLOGY AND GEOPHYSICS   (China)

^b Georgia Institute of Technology   (United States)

^c UNIVERSITY OF ELECTRONIC SCIENCE AND TECHNOLOGY OF CHINA   (China)

Author keywords

chemical doping; lattice strain; piezocharges separation; piezoelectric nanogenerator; ZnO

Indexed keywords

COST EFFECTIVENESS; DOPING (ADDITIVES); FLUORINE; HALOGEN ELEMENTS; NANOSTRUCTURED MATERIALS; NANOTECHNOLOGY; PIEZOELECTRICITY; SEMICONDUCTOR DOPING; ZINC SULFIDE;

CHEMICAL DOPING; DOPING CONCENTRATION; HIGHER EFFICIENCY; LATTICE STRAIN; OUTPUT PERFORMANCE; PIEZOELECTRIC NANOGENERATOR; PIEZOELECTRIC SEMICONDUCTORS; ZNO NANOMATERIALS;

ZINC OXIDE;

EID: 84955327609     PISSN: 19448244     EISSN: 19448252     Source Type: Journal    
DOI: 10.1021/acsami.5b10345     Document Type: Article

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