Local electrical properties of HfO2 thin films measured by conducting atomic force microscopy

Extended Abstracts of International Workshop on Gate Insulator, IWGI 2001

Volumn , Issue , 2001, Pages 180-183

  Goto, T ^a   Sakashita, S ^a   Ikeda, H ^a   Sakashita, M ^a   Sakai, A ^a   Zaima, S ^a   Yasuda, Y ^a  

^a NAGOYA UNIVERSITY   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

ATOMIC FORCE MICROSCOPY; HAFNIUM OXIDES; RECONFIGURABLE HARDWARE; THIN FILMS;

CONDUCTING ATOMIC FORCE MICROSCOPY;

CONDUCTIVE FILMS;

EID: 84954129078     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/IWGI.2001.967578     Document Type: Conference Paper

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