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Volumn 6, Issue , 2016, Pages

Frustration of Negative Capacitance in Al2O3/BaTiO3 Bilayer Structure

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EID: 84953924564     PISSN: None     EISSN: 20452322     Source Type: Journal    
DOI: 10.1038/srep19039     Document Type: Article
Times cited : (52)

References (37)
  • 1
    • 67049154138 scopus 로고    scopus 로고
    • Nanotubular metal-insulator-metal capacitor arrays for energy storage
    • Banerjee, P., Perez, I., Henn-Lecordier, L., Lee, S. B. & Rubloff, G. W. Nanotubular metal-insulator-metal capacitor arrays for energy storage. Nat. Nano. 4, 292-296 (2009).
    • (2009) Nat. Nano , vol.4 , pp. 292-296
    • Banerjee, P.1    Perez, I.2    Henn-Lecordier, L.3    Lee, S.B.4    Rubloff, G.W.5
  • 2
    • 17644387736 scopus 로고    scopus 로고
    • Nanostructured materials for advanced energy conversion and storage devices
    • Arico, A. S., Bruce, P., Scrosati, B., Tarascon, J. M. & Van Schalkwijk, W. Nanostructured materials for advanced energy conversion and storage devices. Nat. Mater. 4, 366-377 (2005).
    • (2005) Nat. Mater , vol.4 , pp. 366-377
    • Arico, A.S.1    Bruce, P.2    Scrosati, B.3    Tarascon, J.M.4    Van Schalkwijk, W.5
  • 3
    • 47049096034 scopus 로고    scopus 로고
    • Al-Doped TiO2 Films with Ultralow Leakage Currents for Next Generation DRAM Capacitors
    • Kim, S. K. et al. Al-Doped TiO2 Films with Ultralow Leakage Currents for Next Generation DRAM Capacitors. Adv. Mater. 20, 1429-1435 (2008).
    • (2008) Adv. Mater , vol.20 , pp. 1429-1435
    • Kim, S.K.1
  • 4
    • 77957193960 scopus 로고    scopus 로고
    • Capacitors with an Equivalent Oxide Thickness of < 0.5 nm for Nanoscale Electronic Semiconductor Memory
    • Kim, S. K. et al. Capacitors with an Equivalent Oxide Thickness of < 0.5 nm for Nanoscale Electronic Semiconductor Memory. Adv. Funct. Mater. 20, 2989-3003 (2010).
    • (2010) Adv. Funct. Mater , vol.20 , pp. 2989-3003
    • Kim, S.K.1
  • 5
    • 0034739021 scopus 로고    scopus 로고
    • Alternative dielectrics to silicon dioxide for memory and logic devices
    • Kingon, A. I., Maria, J.-P. & Streiffer, S. K. Alternative dielectrics to silicon dioxide for memory and logic devices. Nature 406, 1032-1038 (2000).
    • (2000) Nature , vol.406 , pp. 1032-1038
    • Kingon, A.I.1    Maria, J.-P.2    Streiffer, S.K.3
  • 6
    • 40449116091 scopus 로고    scopus 로고
    • Use of Negative Capacitance to Provide Voltage Amplification for Low Power Nanoscale Devices
    • Salahuddin, S. & Datta, S. Use of Negative Capacitance to Provide Voltage Amplification for Low Power Nanoscale Devices. Nano Lett. 8, 405-410 (2007).
    • (2007) Nano Lett. , vol.8 , pp. 405-410
    • Salahuddin, S.1    Datta, S.2
  • 7
    • 79952599597 scopus 로고    scopus 로고
    • Examination of the Possibility of Negative Capacitance Using Ferroelectric Materials in Solid State Electronic Devices
    • Krowne, C. M., Kirchoefer, S. W., Chang, W., Pond, J. M. & Alldredge, L. M. B. Examination of the Possibility of Negative Capacitance Using Ferroelectric Materials in Solid State Electronic Devices. Nano Lett. 11, 988-992 (2011).
    • (2011) Nano Lett. , vol.11 , pp. 988-992
    • Krowne, C.M.1    Kirchoefer, S.W.2    Chang, W.3    Pond, J.M.4    Alldredge, L.M.B.5
  • 8
    • 80053218135 scopus 로고    scopus 로고
    • Experimental evidence of ferroelectric negative capacitance in nanoscale heterostructures
    • Khan, A. I. et al. Experimental evidence of ferroelectric negative capacitance in nanoscale heterostructures. Appl. Phys. Lett. 99, 113501 (2011).
    • (2011) Appl. Phys. Lett. , vol.99
    • Khan, A.I.1
  • 9
    • 84904023203 scopus 로고    scopus 로고
    • Experimental Observation of Negative Capacitance in Ferroelectrics at Room Temperature
    • Appleby, D. J. R. et al. Experimental Observation of Negative Capacitance in Ferroelectrics at Room Temperature. Nano Lett. 14, 3864-3868 (2014).
    • (2014) Nano Lett. , vol.14 , pp. 3864-3868
    • Appleby, D.J.R.1
  • 10
    • 84907870426 scopus 로고    scopus 로고
    • Room temperature negative capacitance in a ferroelectric-dielectric superlattice heterostructure
    • Gao, W. et al. Room temperature negative capacitance in a ferroelectric-dielectric superlattice heterostructure. Nano Lett. 14, 5814-5819 (2014).
    • (2014) Nano Lett. , vol.14 , pp. 5814-5819
    • Gao, W.1
  • 11
    • 51249192887 scopus 로고
    • On the theory of superconductivity
    • Ginzburg, V. On the theory of superconductivity. Il Nuovo Cimento Series 10 2, 1234-1250 (1955).
    • (1955) Il Nuovo Cimento Series 10 , vol.2 , pp. 1234-1250
    • Ginzburg, V.1
  • 12
    • 0001452873 scopus 로고
    • XCVI. Theory of barium titanate: Part I
    • Devonshire, A. F. XCVI. Theory of barium titanate: Part I. Phil. Mag. 40, 1040-1063 (1949).
    • (1949) Phil. Mag , vol.40 , pp. 1040-1063
    • Devonshire, A.F.1
  • 13
    • 0002389785 scopus 로고
    • Theory of tetragonal twin structures in ferroelectric perovskites with a first-order phase transition
    • Cao, W. & Cross, L. Theory of tetragonal twin structures in ferroelectric perovskites with a first-order phase transition. Phys. Rev. B 44, 5 (1991).
    • (1991) Phys. Rev. B , vol.44 , pp. 5
    • Cao, W.1    Cross, L.2
  • 14
    • 0037417284 scopus 로고    scopus 로고
    • Critical thickness for ferroelectricity in perovskite ultrathin films
    • Junquera, J. & Ghosez, P. Critical thickness for ferroelectricity in perovskite ultrathin films. Nature 422, 506-509 (2003).
    • (2003) Nature , vol.422 , pp. 506-509
    • Junquera, J.1    Ghosez, P.2
  • 15
    • 19744375799 scopus 로고    scopus 로고
    • Ultrathin Films of Ferroelectric Solid Solutions under a Residual Depolarizing Field
    • Kornev, I., Fu, H. & Bellaiche, L. Ultrathin Films of Ferroelectric Solid Solutions under a Residual Depolarizing Field. Phys. Rev. Lett. 93, 196104 (2004).
    • (2004) Phys. Rev. Lett. , vol.93
    • Kornev, I.1    Fu, H.2    Bellaiche, L.3
  • 16
    • 39149143661 scopus 로고    scopus 로고
    • Depolarization in modeling nano-scale ferroelectrics using the Landau free energy functional
    • Woo, C. H. & Zheng, Y. Depolarization in modeling nano-scale ferroelectrics using the Landau free energy functional. Appl. Phys. A 91, 59-63 (2008).
    • (2008) Appl. Phys. A , vol.91 , pp. 59-63
    • Woo, C.H.1    Zheng, Y.2
  • 18
    • 43949138619 scopus 로고    scopus 로고
    • Short-range and long-range contributions to the size effect in metal-ferroelectric-metal heterostructures
    • Tagantsev, A. K., Gerra, G. & Setter, N. Short-range and long-range contributions to the size effect in metal-ferroelectric-metal heterostructures. Phys. Rev. B 77, 174111 (2008).
    • (2008) Phys. Rev. B , vol.77
    • Tagantsev, A.K.1    Gerra, G.2    Setter, N.3
  • 19
    • 77957672657 scopus 로고    scopus 로고
    • Multidomain ferroelectricity as a limiting factor for voltage amplification in ferroelectric field-effect transistors
    • Cano, A. &Jimenez, D. Multidomain ferroelectricity as a limiting factor for voltage amplification in ferroelectric field-effect transistors. Appl. Phys. Lett. 97, 133509 (2010).
    • (2010) Appl. Phys. Lett. , vol.97
    • Cano, A.1    Jimenez, D.2
  • 20
    • 84953922531 scopus 로고    scopus 로고
    • Emergence of negative capacitance in multi-domain ferroelectric-paraelectric nano-capacitors at finite bias
    • in print
    • Kasamtsu, S. et al. Emergence of negative capacitance in multi-domain ferroelectric-paraelectric nano-capacitors at finite bias. Adv. Mater. (in print)
    • Adv. Mater
    • Kasamtsu, S.1
  • 21
    • 33749850301 scopus 로고    scopus 로고
    • Origin of the dielectric dead layer in nanoscale capacitors
    • Stengel, M. & Spaldin, N. A. Origin of the dielectric dead layer in nanoscale capacitors. Nature 443, 679-682 (2006).
    • (2006) Nature , vol.443 , pp. 679-682
    • Stengel, M.1    Spaldin, N.A.2
  • 22
    • 65349185808 scopus 로고    scopus 로고
    • Enhancement of ferroelectricity at metal-oxide interfaces
    • Stengel, M., Vanderbilt, D. & Spaldin, N. A. Enhancement of ferroelectricity at metal-oxide interfaces. Nat. Mater. 8, 392-397 (2009).
    • (2009) Nat. Mater , vol.8 , pp. 392-397
    • Stengel, M.1    Vanderbilt, D.2    Spaldin, N.A.3
  • 24
    • 84886315000 scopus 로고    scopus 로고
    • Phase transitions and domain structures of ferroelectric nanoparticles: Phase field model incorporating strong elastic and dielectric inhomogeneity
    • Wang, J., Ma, X., Li, Q., Britson, J. & Chen, L.-Q. Phase transitions and domain structures of ferroelectric nanoparticles: Phase field model incorporating strong elastic and dielectric inhomogeneity. Acta Mater. 61, 7591-7603 (2013).
    • (2013) Acta Mater , vol.61 , pp. 7591-7603
    • Wang, J.1    Ma, X.2    Li, Q.3    Britson, J.4    Chen, L.-Q.5
  • 25
    • 84866635541 scopus 로고    scopus 로고
    • Electrical properties of improper ferroelectrics from first principles
    • Stengel, M., Fennie, C. J. & Ghosez, P. Electrical properties of improper ferroelectrics from first principles. Phys. Rev. B 86, 094112 (2012).
    • (2012) Phys. Rev. B , vol.86
    • Stengel, M.1    Fennie, C.J.2    Ghosez, P.3
  • 26
    • 84889789434 scopus 로고    scopus 로고
    • Phase transitions in ferroelectric-paraelectric superlattices: Stability of single domain state
    • Levanyuk, A. P. & Misirlioglu, I. B. Phase transitions in ferroelectric-paraelectric superlattices: Stability of single domain state. Appl. Phys. Lett. 103, 192906 (2013).
    • (2013) Appl. Phys. Lett. , vol.103
    • Levanyuk, A.P.1    Misirlioglu, I.B.2
  • 28
    • 84859169895 scopus 로고    scopus 로고
    • Enhanced electromechanical response of ferroelectrics due to charged domain walls
    • Sluka, T., Tagantsev, A. K., Damjanovic, D., Gureev, M. & Setter, N. Enhanced electromechanical response of ferroelectrics due to charged domain walls. Nat. Commun. 3, 748 (2012).
    • (2012) Nat. Commun. , vol.3 , pp. 748
    • Sluka, T.1    Tagantsev, A.K.2    Damjanovic, D.3    Gureev, M.4    Setter, N.5
  • 30
    • 84880821402 scopus 로고    scopus 로고
    • Effect of a built-in electric field in asymmetric ferroelectric tunnel junctions
    • Liu, Y., Lou, X., Bibes, M. & Dkhil, B. Effect of a built-in electric field in asymmetric ferroelectric tunnel junctions. Phys. Rev. B 88, 024106 (2013).
    • (2013) Phys. Rev. B , vol.88
    • Liu, Y.1    Lou, X.2    Bibes, M.3    Dkhil, B.4
  • 31
    • 34347331337 scopus 로고    scopus 로고
    • Drift of charged defects in local fields as aging mechanism in ferroelectrics
    • Genenko, Y. A. & Lupascu, D. C. Drift of charged defects in local fields as aging mechanism in ferroelectrics. Phys. Rev. B 75, 184107 (2007).
    • (2007) Phys. Rev. B , vol.75
    • Genenko, Y.A.1    Lupascu, D.C.2
  • 32
    • 84923070416 scopus 로고    scopus 로고
    • Negative capacitance in a ferroelectric capacitor
    • Khan. A. I. et al. Negative capacitance in a ferroelectric capacitor. Nat. Mater. 14, 182 (2014).
    • (2014) Nat. Mater. , vol.14 , pp. 182
    • Khan, A.I.1
  • 33
    • 0031222061 scopus 로고    scopus 로고
    • Asymmetric Ferroelectricity and Anomalous Current Conduction in Heteroepitaxial BaTiO3 Thin Films
    • Kazuhide, A., Shuichi, K., Naoko, Y., Kenya, S. & Takashi, K. Asymmetric Ferroelectricity and Anomalous Current Conduction in Heteroepitaxial BaTiO3 Thin Films. Jpn. J. Appl. Phys. 36, 5846 (1997).
    • (1997) Jpn. J. Appl. Phys. , vol.36 , pp. 5846
    • Kazuhide, A.1    Shuichi, K.2    Naoko, Y.3    Kenya, S.4    Takashi, K.5
  • 34
    • 8344268623 scopus 로고    scopus 로고
    • 3 Thin Films
    • 3 Thin Films. Science 306, 1005-1009 (2004).
    • (2004) Science , vol.306 , pp. 1005-1009
    • Choi, K.J.1
  • 35
    • 0001578475 scopus 로고
    • Electromechanical Properties of Oxygen-Octahedra Ferroelectric Crystals
    • Yamada, T. Electromechanical Properties of Oxygen-Octahedra Ferroelectric Crystals. J. Appl. Phys. 43, 328-338 (1972).
    • (1972) J. Appl. Phys. , vol.43 , pp. 328-338
    • Yamada, T.1
  • 36
    • 58049126339 scopus 로고    scopus 로고
    • Screening and retardation effects on 180° -domain wall motion in ferroelectrics: Wall velocity and nonlinear dynamics due to polarization-screening charge interactions
    • Eliseev, E. A. et al. Screening and retardation effects on 180° -domain wall motion in ferroelectrics: Wall velocity and nonlinear dynamics due to polarization-screening charge interactions. Phys. Rev. B 78, 245409 (2008).
    • (2008) Phys. Rev. B , vol.78
    • Eliseev, E.A.1


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.