Surface Effects on the Mott-Hubbard Transition in Archetypal V2 O3

Physical Review Letters

Volumn 115, Issue 23, 2015, Pages

  Lantz, G ^a,f   Hajlaoui, M ^a   Papalazarou, E ^a   Jacques, V L R ^a   Mazzotti, A ^a   Marsi, M ^a   Lupi, S ^b   Amati, M ^c   Gregoratti, L ^c   Si, L ^d   Zhong, Z ^d,e   Held, K ^d  

^a UNIVERSITÉ PARIS SUD   (France)

^b UNIVERSITÀ DI ROMA LA SAPIENZA   (Italy)

^c SINCROTRONE TRIESTE   (Italy)

^d VIENNA UNIVERSITY OF TECHNOLOGY   (Austria)

^e UNIVERSITY OF WÜRZBURG   (Germany)

^f ETH ZURICH   (Switzerland)

Author keywords

[No Author keywords available]

Indexed keywords

DENSITY FUNCTIONAL THEORY; DOPING (ADDITIVES); MEAN FIELD THEORY; METAL INSULATOR BOUNDARIES; PHOTOELECTRON SPECTROSCOPY; SEMICONDUCTOR INSULATOR BOUNDARIES; SURFACE DEFECTS; X RAY DIFFRACTION;

DYNAMICAL MEAN-FIELD THEORY; ISO-STRUCTURAL TRANSITION; MOTT-HUBBARD TRANSITION; NUCLEATION CENTER; SCANNING PHOTOELECTRON MICROSCOPY; SURFACE CRYSTALLOGRAPHIC ORIENTATION; SURFACE TERMINATION; TEMPERATURE-INDUCED;

METAL INSULATOR TRANSITION;

EID: 84949680246     PISSN: 00319007     EISSN: 10797114     Source Type: Journal    
DOI: 10.1103/PhysRevLett.115.236802     Document Type: Article

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