메뉴 건너뛰기




Volumn 2000-January, Issue , 2000, Pages 1273-1276

Strain-balanced materials for high-efficiency solar cells

Author keywords

[No Author keywords available]

Indexed keywords

EFFICIENCY; ENERGY GAP; SEMICONDUCTING INDIUM GALLIUM ARSENIDE;

EID: 84949559498     PISSN: 01608371     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/PVSC.2000.916122     Document Type: Conference Paper
Times cited : (15)

References (22)
  • 2
    • 0000668222 scopus 로고    scopus 로고
    • Over 30% efficient InGaP/GaAs tandem solar cells
    • T. Takamoto, E. Ikeda, H. Kurita, and M. Ohmori. Over 30% efficient InGaP/GaAs tandem solar cells. Appl. Phys. Lett., 70(3):381-383, 1997.
    • (1997) Appl. Phys. Lett. , vol.70 , Issue.3 , pp. 381-383
    • Takamoto, T.1    Ikeda, E.2    Kurita, H.3    Ohmori, M.4
  • 4
    • 0033740560 scopus 로고    scopus 로고
    • 25.5% efficient GaInP/GafnAs tandem solar cells grown on GaAs substrates
    • F. Dimroth, U. Schubert, and A.W. Bett. 25.5% efficient GaInP/GafnAs tandem solar cells grown on GaAs substrates. IEEE Elect. Dev. Lett., 21(5):209-211, 2000.
    • (2000) IEEE Elect. Dev. Lett. , vol.21 , Issue.5 , pp. 209-211
    • Dimroth, F.1    Schubert, U.2    Bett, A.W.3
  • 5
    • 0346955939 scopus 로고
    • Defects in epitaxial multilayers (I)
    • J. W. Matthews and A. E. Blakeslee. Defects in epitaxial multilayers (I). J. Crystal Growth, 27:118-125, 1974.
    • (1974) J. Crystal Growth , vol.27 , pp. 118-125
    • Matthews, J.W.1    Blakeslee, A.E.2
  • 6
    • 33744558557 scopus 로고
    • Defects in epitaxial multilayers (II)
    • J. W. Matthews and A. E. Blakeslee. Defects in epitaxial multilayers (II). J. Crystal Growth, 29:273-280, 1975.
    • (1975) J. Crystal Growth , vol.29 , pp. 273-280
    • Matthews, J.W.1    Blakeslee, A.E.2
  • 7
    • 4143078533 scopus 로고
    • Defects in epitaxial multilayers (III)
    • J. W. Matthews and A. E. Blakeslee. Defects in epitaxial multilayers (III). J. Crystal Growth, 32:265-273, 1976.
    • (1976) J. Crystal Growth , vol.32 , pp. 265-273
    • Matthews, J.W.1    Blakeslee, A.E.2
  • 12
    • 36749120810 scopus 로고
    • Band gap versus composition and demonstration of vegard's law for InGaAsP lattice matched to InP
    • R.E. Nahory, M.A. Pollack, W.D. Johnston Jr, and R.L. Barns. Band gap versus composition and demonstration of Vegard's law for InGaAsP lattice matched to InP. Appl. Phys. Lett., 33(7):659-661, 1978.
    • (1978) Appl. Phys. Lett. , vol.33 , Issue.7 , pp. 659-661
    • Nahory, R.E.1    Pollack, M.A.2    Johnston, W.D.3    Barns, R.L.4
  • 21
    • 0001661246 scopus 로고    scopus 로고
    • Electronic states and band alignment in GaInNAs/GaAs quantum-well structures with low nitrogen content
    • M. Hetterich, M.D. Dawson, A. Yu, D. Bernklau, and H. Riechert. Electronic states and band alignment in GaInNAs/GaAs quantum-well structures with low nitrogen content. Appl. Phys. Lett., 76(8):1030-1032, 2000.
    • (2000) Appl. Phys. Lett. , vol.76 , Issue.8 , pp. 1030-1032
    • Hetterich, M.1    Dawson, M.D.2    Yu, A.3    Bernklau, D.4    Riechert, H.5


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.