2μm resonant cavity enhanced InP/InGaAs single quantum well photo-detector

Electronics Letters

Volumn 35, Issue 15, 1999, Pages 1272-1274

  Jourba, S ^a   Besland, M P ^a   Gendry, M ^a   Garrigues, M ^a   Leclercq, J L ^a   Rojo Romeo, P ^a   Viktorovich, P ^a   Cortial, S ^b   Hugon, X ^b   Pautet, C ^b  

^a INSTITUT DES NANOTECHNOLOGIES DE LYON   (France)

^b THALES   (France)

Author keywords

[No Author keywords available]

Indexed keywords

MIRRORS; PHOTODIODES; QUANTUM EFFICIENCY; SEMICONDUCTING INDIUM GALLIUM ARSENIDE; SEMICONDUCTOR QUANTUM WELLS; SUBSTRATES;

BRAGG REFLECTORS; RESONANT CAVITY ENHANCED PHOTODETECTION;

PHOTODETECTORS;

EID: 0032640650     PISSN: 00135194     EISSN: None     Source Type: Journal    
DOI: 10.1049/el:19990620     Document Type: Article

References (5)

1. JOSHI, A.M., et al.: 'Near-infared (1-3μm) InGaAs detectors and arrays: crystal growth, leakage current and reliability', SPIE, 1992, 1715, pp. 585-593
2. DRIES, J.C., et al.: 'Strain compensated In1-xGaxAs(x<0.47) quantum well photodiodes for extended wavelength operation', Appl. Phys. Lett., 1998, 73, (16), pp. 2263-2265
3. SVERDLOV, B.N., et al.: 'Reduction of dark current in photodiodes by the use of a resonant cavity', Electron. Lett., 1993, 29, pp. 1019-1021
4. LARSON, A., et al.: 'Spectral and temporal characteristics of GaA1As/GaAs superlattice p-i-n photodetectors', Appl. Phys. Lett., 1985, 47, (8), pp. 866-868
5. 0.25 compressively strained fractional monolayer superlattices grown on InP by solid source molecular beam epitaxy', to be published in Appl. Phys. Lett.