Relation between defect generation, stress induced leakage current and soft breakdown in thin (<5 nm) oxides

Microelectronics Reliability

Volumn 40, Issue 4-5, 2000, Pages 707-710

  Rodriguez R ^a   Miranda, E ^a,b   Pau, R ^a,c,d   Sune J ^a   Nafria M ^a   Aymerich, X ^a  

^a UNIVERSITAT AUTÒNOMA DE BARCELONA   (Spain)

^b UNIVERSIDAD DE BUENOS AIRES   (Argentina)

^c UNIVERSITY OF CAGLIARI   (Italy)

^d European Union   (Belgium)

Author keywords

[No Author keywords available]

Indexed keywords

CRYSTAL DEFECTS; ELECTRIC BREAKDOWN OF SOLIDS; LEAKAGE CURRENTS; SEMICONDUCTING SILICON COMPOUNDS; SILICA; STRESSES; THIN FILMS;

SOFT BREAKDOWN (SBD); STRESS INDUCED LEAKAGE CURRENTS (SILC);

SEMICONDUCTING FILMS;

EID: 0343825173     PISSN: 00262714     EISSN: None     Source Type: Journal    
DOI: 10.1016/s0026-2714(99)00278-4     Document Type: Article

References (6)

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4. DiMaria DJ, Cartier E. J Appl Phys 1995;78:3883.
5. Buchanan DA, Stathis JH, Cartier E, DiMaria DJ. Mic Engng 1997;36:329.
6. Rodriguez R, Nafría M, Miranda E, Suñé J, Aymerich X. IEEE Electron Dev Lett 1999;20:317.