Tolerance of Intrinsic Defects in PbS Quantum Dots

Journal of Physical Chemistry Letters

Volumn 6, Issue 23, 2015, Pages 4711-4716

  Zherebetskyy, Danylo ^a   Zhang, Yingjie ^a,b   Salmeron, Miquel ^a   Wang, Lin Wang ^a  

^a LAWRENCE BERKELEY NATIONAL LABORATORY   (United States)

^b UNIVERSITY OF CALIFORNIA   (United States)

Author keywords

density functional theory; in gap states; quantum dot defects; stoichiometry

Indexed keywords

COMPUTATION THEORY; DENSITY FUNCTIONAL THEORY; ENERGY GAP; NANOCRYSTALS; QUANTUM THEORY; SEMICONDUCTING LEAD COMPOUNDS; STOICHIOMETRY;

COLLOIDAL QUANTUM DOTS; COMPUTATIONAL RESULTS; IN-GAP STATE; INTRINSIC DEFECTS; KINETIC PROCESS; NON IDEALS; NON-STOICHIOMETRIC; PBS QUANTUM DOTS;

SEMICONDUCTOR QUANTUM DOTS;

LEAD; QUANTUM DOT; SULFIDE;

CHEMISTRY; NANOTECHNOLOGY; PHILOSOPHY; PROCEDURES;

LEAD; NANOTECHNOLOGY; PHILOSOPHY; QUANTUM DOTS; SULFIDES;

EID: 84948968979     PISSN: None     EISSN: 19487185     Source Type: Journal    
DOI: 10.1021/acs.jpclett.5b02202     Document Type: Article

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