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Physica B: Condensed Matter

Volumn 253, Issue 1-2, 1998, Pages 10-27

Electronic structure, impurity binding energies, absorption spectra of InAs/GaAs quantum dots

(3) Cusack, M A a Briddon, P R a Jaros, M a

a NEWCASTLE UNIVERSITY (United Kingdom)

Author keywords

Absorption; Electronic structure; Impurities; Inas gaas; Quantum dots

Indexed keywords

ABSORPTION SPECTROSCOPY; BINDING ENERGY; CALCULATIONS; ELECTRON ENERGY LEVELS; ELECTRONIC STRUCTURE; GEOMETRY; IMPURITIES; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTING INDIUM COMPOUNDS; STRAIN;

MULTIBAND EFFECTIVE MASS APPROACH; QUANTUM NUMBER; STRANSKI-KRASTANOW MODE; STRUCTURAL SIZE; VALENCE FORCE FIELD METHOD;

SEMICONDUCTOR QUANTUM DOTS;

EID: 0032188215 PISSN: 09214526 EISSN: None Source Type: Journal
DOI: 10.1016/S0921-4526(98)00389-5 Document Type: Article

Times cited : (18)

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