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Volumn 3, Issue 47, 2015, Pages 12192-12198

Exploring the local electronic structure and geometric arrangement of ALD Zn(O,S) buffer layers using X-ray absorption spectroscopy

(9) Dadlani, Anup L a Trejo, Orlando b Acharya, Shinjita b Torgersen, Jan b Petousis, Ioannis b Nordlund, Dennis c Sarangi, Ritimukta c Schindler, Peter b Prinz, Fritz B b

a STANFORD UNIVERSITY (United States)

b Stanford University (United States)

c SLAC NATIONAL ACCELERATOR LABORATORY (United States)

Author keywords

[No Author keywords available]

Indexed keywords

BOND LENGTH; BUFFER LAYERS; ELECTRONIC STRUCTURE; FILM GROWTH; GEOMETRY; OPTICAL WAVEGUIDES; QUANTUM CHEMISTRY; QUANTUM THEORY; SULFUR; X RAY ABSORPTION NEAR EDGE STRUCTURE SPECTROSCOPY; X RAY ABSORPTION SPECTROSCOPY; ZINC;

GEOMETRIC STRUCTURE; HIGHER EFFICIENCY; LOCAL ELECTRONIC STRUCTURES; NEAR EDGE X RAY ABSORPTION FINE STRUCTURE; QUANTUM SIMULATIONS; SPECTROSCOPIC TOOL; SULFUR INCORPORATION; X-RAY ABSORPTION NEAR-EDGE STRUCTURE;

ATOMIC LAYER DEPOSITION;

EID: 84948693201 PISSN: 20507534 EISSN: 20507526 Source Type: Journal
DOI: 10.1039/c5tc02912k Document Type: Article

Times cited : (23)

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