Mechanisms of formation of chemical bonding and defect formation at the a-SiO2/BaTiO3 interfaces

Journal of Physics Condensed Matter

Volumn 27, Issue 47, 2015, Pages

  Kimmel, Anna V ^a,b   Sushko, Peter V ^b,c  

^a NATIONAL PHYSICAL LABORATORY   (United Kingdom)

^b UNIVERSITY COLLEGE LONDON   (United Kingdom)

^c PACIFIC NORTHWEST NATIONAL LABORATORY   (United States)

Author keywords

Defects; Interfaces; Oxide ferroelectric interfaces

Indexed keywords

CHEMICAL BONDS; DEFECTS; INTERFACES (MATERIALS); MOLECULAR DYNAMICS; SILICA;

AB INITIO MOLECULAR DYNAMICS; AMORPHOUS SILICA; CHEMICAL BONDINGS; DEFECT FORMATION; INTERFACIAL BONDS; MECHANISMS OF FORMATION; OXIDE INTERFACES; SURFACE TERMINATION;

BARIUM COMPOUNDS;

EID: 84947997941     PISSN: 09538984     EISSN: 1361648X     Source Type: Journal    
DOI: 10.1088/0953-8984/27/47/475006     Document Type: Article

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