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Thin Solid Films

Volumn 520, Issue 6, 2012, Pages 1997-2000

Evidence of diffusion at BaTiO 3/silicon interfaces

(6) Chung, U C a Michau, D a,c Elissalde, C a,c Li, S b Klein, A b Maglione, M a,c

a UNIVERSITÉ DE BORDEAUX (France)

b DARMSTADT UNIVERSITY OF TECHNOLOGY (Germany)

c INST CHIM MATIERE COND BORDEAUX (France)

Author keywords

Barium titanate; Diffusion; Interface; Interphase growth; Rutherford Backscattering Spectrometry (RBS); Thin films; X ray photoelectron spectroscopy (XPS)

Indexed keywords

FRESNOITES; INTEGRATED STRUCTURE; INTERMEDIATE ANNEALINGS; MODEL SYSTEM; RUTHERFORD BACK-SCATTERING SPECTROMETRY; RUTHERFORD BACKSCATTERING SPECTROMETRY (RBS); X-RAY PHOTOELECTRON SPECTROSCOPY (XPS);

BACKSCATTERING; BARIUM; BARIUM TITANATE; DIFFUSION; PHOTONS; RUTHERFORD BACKSCATTERING SPECTROSCOPY; SPECTROMETRY; THIN FILMS; X RAY DIFFRACTION ANALYSIS; X RAY PHOTOELECTRON SPECTROSCOPY;

INTERFACES (MATERIALS);

EID: 84855918912 PISSN: 00406090 EISSN: None Source Type: Journal
DOI: 10.1016/j.tsf.2011.09.055 Document Type: Article

Times cited : (8)

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