Microstructural, electrical and magnetic properties of erbium doped zinc oxide single crystals

Electronic Materials Letters

Volumn 11, Issue 6, 2015, Pages 998-1002

  Murmu, P P ^a,b   Kennedy, J ^a,b   Ruck, B J ^b   Rubanov, S ^c  

^a GNS SCIENCE   (New Zealand)

^b MACDIARMID INSTITUTE FOR ADVANCED MATERIALS AND NANOTECHNOLOGY   (New Zealand)

^c UNIVERSITY OF MELBOURNE   (Australia)

Author keywords

erbium; ferromagnetism; Hall effect; implantation; RBS and channeling; ZnO

Indexed keywords

ANNEALING; ATOMS; ERBIUM; FERROMAGNETISM; HALL EFFECT; HIGH RESOLUTION TRANSMISSION ELECTRON MICROSCOPY; ION IMPLANTATION; MAGNETIC PROPERTIES; MAGNETISM; RUTHERFORD BACKSCATTERING SPECTROSCOPY; TRANSMISSION ELECTRON MICROSCOPY; ZINC; ZINC OXIDE;

ELECTRICAL AND MAGNETIC PROPERTY; INTERSTITIAL SITES; INTRINSIC DEFECTS; MICRO-STRUCTURAL; NEAR SURFACE REGIONS; RUTHERFORD BACKSCATTERING AND CHANNELINGS; SUBSTITUTIONAL LATTICE SITES; ZNO;

SINGLE CRYSTALS;

EID: 84947252972     PISSN: 17388090     EISSN: 20936788     Source Type: Journal    
DOI: 10.1007/s13391-015-5124-8     Document Type: Article

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