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Volumn 110, Issue 3, 2011, Pages

Structural and photoluminescence properties of Gd implanted ZnO single crystals

(9) Murmu, P P a,b,c Mendelsberg, R J c,d Kennedy, J a,c Carder, D A a,c Ruck, B J b,c Markwitz, A a,c Reeves, R J c,d Malar, P e Osipowicz, T e

a GNS SCIENCE (New Zealand)

b VICTORIA UNIVERSITY OF WELLINGTON (New Zealand)

c MACDIARMID INSTITUTE FOR ADVANCED MATERIALS AND NANOTECHNOLOGY (New Zealand)

d UNIVERSITY OF CANTERBURY (New Zealand)

e NATIONAL UNIVERSITY OF SINGAPORE (Singapore)

Author keywords

[No Author keywords available]

Indexed keywords

DEEP LEVEL; DEFECT EMISSION; FLUENCES; GREEN EMISSIONS; IMPLANTATION FLUENCE; IMPLANTED SAMPLES; LATTICE DISORDERS; LOW TEMPERATURE PHOTOLUMINESCENCE; ONE-PHONON DENSITY; PHOTOLUMINESCENCE PROPERTIES; RED SHIFT; SURFACE REGION; ZNO; ZNO SINGLE CRYSTALS;

ANNEALING; DEFECT DENSITY; DEFECTS; DIFFRACTIVE OPTICS; GADOLINIUM; OXYGEN VACANCIES; PHOTOLUMINESCENCE; RAMAN SPECTROSCOPY; RUTHERFORD BACKSCATTERING SPECTROSCOPY; ZINC OXIDE;

SINGLE CRYSTALS;

EID: 80051933414 PISSN: 00218979 EISSN: None Source Type: Journal
DOI: 10.1063/1.3619852 Document Type: Article

Times cited : (79)

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