Process and device characteristics of pd nanocrystals mos memory

2003 International Semiconductor Device Research Symposium, ISDRS 2003 - Proceedings

Volumn , Issue , 2003, Pages 218-219

  Sargentis, C ^a   Giannakopoulos, K ^b   Travlos, A ^b   Tsamakis, D ^a  

^a NATIONAL TECHNICAL UNIVERSITY OF ATHENS   (Greece)

^b INSTITUTE OF MATERIALS SCIENCE   (Greece)

Author keywords

[No Author keywords available]

Indexed keywords

CHEMICAL VAPOR DEPOSITION; DEPOSITION; DYNAMIC RANDOM ACCESS STORAGE; GERMANIUM; ION IMPLANTATION; MOLECULAR BEAM EPITAXY; MOS DEVICES; NANOCRYSTALS; SEMICONDUCTING SILICON; SEMICONDUCTOR DEVICES; STATIC RANDOM ACCESS STORAGE; VAPOR DEPOSITION;

DEVICE CHARACTERISTICS; DRAM MEMORY; EMBEDDED NANOCRYSTALS; LOW-POWER OPERATION; NON-VOLATILE MEMORY; PD NANOCRYSTALS; RECORDING DENSITY; SILICON TECHNOLOGIES;

MOSFET DEVICES;

EID: 84945302631     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/ISDRS.2003.1272068     Document Type: Conference Paper

References (5)

1. S. Tiwari, F. Rana, H.Hanafi, A. Hartstein, E. Crabbc and K. Chan, "A silicon based memory", Appl. Phys. Lett. 68 (10), p.1377-1379, March 1996.
2. E.Kapetanakis, P. Normand, D. Tsoukalas, K. Beltsios, J. Stoemcnos, S. Zhang, J. van den Berg, Charge storage and inerface states effects in Si-nanocrystal memory obtained using low-energy Si' implantation and annealing", Appl. Phys. Lett. 77 (21), p.3450- 3452, November 2000.
3. Y. Xiaoli, S. Yi, G. Shulin, Z. Jianrriin, Z. Youdou, S. Kenichi, 1. Hiroki, H. Toshiro, "Effects of interface traps in silicon-quantum -dots-based memory structures", Physica E 8, p. 189-193, (2000).
4. A. Kanjilal, J. Lundsgaard Hansen, P. Gaiduk, A. N. Larsen, N. Cherkashin, A. Claverie, P. Normand, E.Kapetanakis, D. Skariatos, D. Tsoukalas, "Structural and electrical properties of silicon dioxide layers with embedded germanium nanocrystals grown by molecular beam epitaxy, Appl. Phys. Lett.82 (8), p. 1212-1214, February 2003.
5. Z. Liu, C. Lee, V. Narayanan, G. Pei and E. Chihchuan Kan, IEE transactions on electron devices vol. 49 (9), p.l606-1613, September 2002.