Small signal modeling of high electron mobility transistors on silicon and silicon carbide substrate with consideration of substrate loss mechanism

Solid-State Electronics

Volumn 115, Issue , 2016, Pages 12-16

  Sahoo, A K ^a   Subramani, N K ^a   Nallatamby, J C ^a   Sylvain, L ^a   Loyez, C ^b   Quere, R ^a   Medjdoub, F ^b  

^a UNIVERSITY OF LIMOGES   (France)

^b UNIV LILLE   (France)

Author keywords

AlN GaN AlGaN; CPW; HEMT; Semiconductor device measurements; Small signal model

Indexed keywords

CIRCUIT SIMULATION; CIRCUIT THEORY; COPLANAR WAVEGUIDES; ELECTRON MOBILITY; EQUIVALENT CIRCUITS; FIELD EFFECT TRANSISTORS; HETEROJUNCTION BIPOLAR TRANSISTORS; SCATTERING PARAMETERS; SEMICONDUCTOR DEVICE MODELS; SEMICONDUCTOR DEVICES; SILICON; SILICON CARBIDE; SUBSTRATES; TOPOLOGY; TRANSISTORS; WAVE TRANSMISSION;

ALN; CPW; DISTRIBUTED TRANSMISSIONS; HIGH ELECTRON MOBILITY TRANSISTOR (HEMTS); SEMICONDUCTOR DEVICE MEASUREMENTS; SILICON CARBIDE SUBSTRATES; SMALL SIGNAL EQUIVALENT CIRCUIT; SMALL SIGNAL MODEL;

HIGH ELECTRON MOBILITY TRANSISTORS;

EID: 84944937661     PISSN: 00381101     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.sse.2015.10.001     Document Type: Article

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