Above 16% efficient sequentially grown Cu(In,Ga)(Se,S)2-based solar cells with atomic layer deposited Zn(O,S) buffers

Progress in Photovoltaics: Research and Applications

Volumn 23, Issue 11, 2015, Pages 1493-1500

  Merdes, Saoussen ^a   Ziem, Florian ^a   Lavrenko, Tetiana ^b   Walter, Thomas ^b   Lauermann, Iver ^a   Klingsporn, Max ^c   Schmidt, Sebastian ^a   Hergert, Frank ^d   Schlatmann, Rutger ^a  

^a HAHN MEITNER INSTITUT   (Germany)

^b ULM UNIVERSITY OF APPLIED SCIENCES   (Germany)

^c IHP   (Germany)

^d Bosch Solar CISTech GmbH   (Germany)

Author keywords

atomic layer deposition; chalcopyrite; sequential process; solar cell; thin film

Indexed keywords

ATOMS; BUFFER LAYERS; COPPER COMPOUNDS; EFFICIENCY; ELECTRONIC EQUIPMENT TESTING; OPEN CIRCUIT VOLTAGE; SOLAR ABSORBERS; SOLAR CELLS; THIN FILM SOLAR CELLS; THIN FILMS;

ATOMIC LAYER DEPOSITED; CHALCOPYRITE; CU(IN ,GA)(SE ,S); CU(IN ,GA)(SE ,S)2; LABORATORY-SCALE DEVICES; LARGE AREA MODULE; SEQUENTIAL PROCESS; STABILITY TESTS;

ATOMIC LAYER DEPOSITION;

EID: 84944154974     PISSN: 10627995     EISSN: 1099159X     Source Type: Journal    
DOI: 10.1002/pip.2579     Document Type: Article

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