Analysis of gate currents through high-k dielectrics using a Monte Carlo device simulator [MOSFET applications]

International Conference on Simulation of Semiconductor Processes and Devices, SISPAD

Volumn 2003-January, Issue , 2003, Pages 67-70

  Ohkura, Y ^a   Suzuki, C ^a   Amakawa, H ^a,b   Nishi, K ^a,c  

^a SEMICONDUCTOR LEADING EDGE TECHNOLOGIES INC   (Japan)

^b TOSHIBA CORPORATION   (Japan)

^c KINKI UNIVERSITY   (Japan)

Author keywords

Analytical models; Dielectric constant; Electrons; High K dielectric materials; High K gate dielectrics; Monte Carlo methods; MOSFETs; Probability; Tunneling; Voltage

Indexed keywords

ANALYTICAL MODELS; DRAIN CURRENT; ELECTRIC POTENTIAL; ELECTRON TUNNELING; ELECTRONS; GATE DIELECTRICS; MONTE CARLO METHODS; MOSFET DEVICES; OXIDE FILMS; PERMITTIVITY; PROBABILITY; SEMICONDUCTOR DEVICES;

DEVICE SIMULATORS; GATE CURRENT DENSITY; HIGH- K GATE DIELECTRICS; HIGH-K DIELECTRIC; HIGH-K DIELECTRIC MATERIALS; MONTE CARLO SIMULATORS; MOSFETS; STACK STRUCTURE;

DIELECTRIC MATERIALS;

EID: 84943258223     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/SISPAD.2003.1233639     Document Type: Conference Paper

References (12)

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