Transistor reliability variation correlation to threshold voltage

IEEE International Reliability Physics Symposium Proceedings

Volumn 2015-May, Issue , 2015, Pages 3B21-3B26

  Ramey, S ^a   Chahal, M ^a   Nayak, P ^a   Novak, S ^a   Prasad, C ^a   Hicks, J ^a  

^a INTEL CORPORATION   (United States)

Author keywords

BTI; FinFET; hot carrier; reliability; TDDB; tri gate; variation

Indexed keywords

FINFET; HOT CARRIERS; MOSFET DEVICES; THRESHOLD VOLTAGE;

HOT CARRIER DEGRADATION; NORMALIZING PARAMETERS; SOURCES OF VARIATION; SYSTEMATIC VARIATION; TDDB; TRANSISTOR RELIABILITY; TRIGATE; VARIATION;

RELIABILITY;

EID: 84942942895     PISSN: 15417026     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/IRPS.2015.7112703     Document Type: Conference Paper

References (12)

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