Functionalization of Defect Sites in Graphene with RuO2 for High Capacitive Performance

ACS Applied Materials and Interfaces

Volumn 7, Issue 37, 2015, Pages 20513-20519

  Yang, Fan ^a   Zhang, Lianbing ^a   Zuzuarregui, Ana ^a   Gregorczyk, Keith ^a   Li, Le ^a   Beltrán, Mikel ^a   Tollan, Christopher ^a   Brede, Jens ^c   Rogero, Celia ^b,c   Chuvilin, Andrey ^a,d   Knez, Mato ^a,d  

^a CIC NANOGUNE   (Spain)

^b DONOSTIA INTERNATIONAL PHYSICS CENTER DIPC   (Spain)

^c UNIVERSITY OF THE BASQUE COUNTRY UPV EHU   (Spain)

^d BASQUE FOUNDATION FOR SCIENCE   (Spain)

Author keywords

atomic layer deposition; functionalization; reduced graphene oxide; ruthenium oxide; supercapacitors

Indexed keywords

ATOMIC LAYER DEPOSITION; BINDING SITES; DEFECTS; ELECTROCHEMICAL ELECTRODES; GRAPHENE; PHYSICOCHEMICAL PROPERTIES; SUPERCAPACITOR;

ELECTRODE MATERIAL; FUNCTIONALIZATIONS; IMPROVE PERFORMANCE; INTRINSIC DEFECTS; REDUCED GRAPHENE OXIDES; REDUCED GRAPHENE OXIDES (RGO); RUTHENIUM OXIDE; SPECIFIC CAPACITANCE;

RUTHENIUM COMPOUNDS;

EID: 84942279162     PISSN: 19448244     EISSN: 19448252     Source Type: Journal    
DOI: 10.1021/acsami.5b04704     Document Type: Article

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