Controlling the Er content of porous silicon using the doping current intensity

Nanoscale Research Letters

Volumn 9, Issue 1, 2014, Pages 1-7

  Mula, Guido ^a   Loddo, Lucy ^a   Pinna, Elisa ^a   Tiddia, Maria V ^a   Mascia, Michele ^a   Palmas, Simonetta ^a   Ruffilli, Roberta ^b   Falqui, Andrea ^c  

^a UNIVERSITY OF CAGLIARI   (Italy)

^b ISTITUTO ITALIANO DI TECNOLOGIA   (Italy)

^c KING ABDULLAH UNIVERSITY OF SCIENCE AND TECHNOLOGY   (Saudi Arabia)

Author keywords

Electrochemical impedance spectroscopy; Er doping; Porous Silicon; Reflectivity; Scanning electron microscopy

Indexed keywords

ELECTROCHEMICAL IMPEDANCE SPECTROSCOPY; ENERGY DISPERSIVE SPECTROSCOPY; ERBIUM; POWER QUALITY; PROCESS CONTROL; REFLECTION; SCANNING ELECTRON MICROSCOPY; SILICON COMPOUNDS; SPECTROSCOPY;

CONSTANT CURRENT; CURRENT INTENSITY; ENERGY DISPERSIVE SPECTROSCOPIES (EDS); ER-DOPING; OPTICAL REFLECTIVITY; SPATIALLY RESOLVED; TRANSFERRED CHARGES; VOLTAGE TRANSIENTS;

POROUS SILICON;

EID: 84940307209     PISSN: 19317573     EISSN: 1556276X     Source Type: Journal    
DOI: 10.1186/1556-276X-9-332     Document Type: Article

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