Impedance study of aging porous silicon films

Electrochimica Acta

Volumn 41, Issue 7-8, 1996, Pages 1313-1321

  Parkhutik, V P ^a   Matveeva, E S ^a   Diaz Calleja R ^a  

^a UNIVERSITAT POLITÈCNICA DE VALÈNCIA   (Spain)

Author keywords

Electrical impedance; Porous silicon

Indexed keywords

AGING OF MATERIALS; ELECTRIC CONDUCTIVITY; ELECTRIC FIELDS; ELECTRIC IMPEDANCE; ELECTROLYTES; EQUIVALENT CIRCUITS; FILM GROWTH; LUMINESCENCE; POROUS SILICON; RELAXATION PROCESSES; SPECTROSCOPY;

AC IMPEDANCE SPECTROSCOPY; ELECTROLYTE RESIDUALS; POST GROWTH TREATMENT;

SEMICONDUCTING FILMS;

EID: 0030144491     PISSN: 00134686     EISSN: None     Source Type: Journal    
DOI: 10.1016/0013-4686(95)00452-1     Document Type: Article

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