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Volumn 7, Issue , 2012, Pages

Characterization of Er in porous Si

Author keywords

Er doping; Light emitting devices; Porous silicon; Refractive index

Indexed keywords

CURRENT DENSITY; LIGHT; LIGHT EMISSION; REFRACTIVE INDEX;

EID: 84864008749     PISSN: 19317573     EISSN: 1556276X     Source Type: Journal    
DOI: 10.1186/1556-276X-7-376     Document Type: Article
Times cited : (8)

References (33)
  • 3
    • 84864005035 scopus 로고    scopus 로고
    • In Low-dimensional silicon as a photonic material
    • Edited by Kumar V. Oxford: Elsevier Ltd
    • Daldosso N, Pavesi L: In Low-dimensional silicon as a photonic material, In Nanosilicon. Edited by Kumar V. Oxford: Elsevier Ltd; 2007:314-333.
    • (2007) Nanosilicon , pp. 314-333
    • Daldosso, N.1    Pavesi, L.2
  • 4
    • 0037074865 scopus 로고    scopus 로고
    • Si based optoelectronics for communications
    • Masini G, Colace L, Assanto G: Si based optoelectronics for communications. Mat Sci Eng B 2002, 89:2-9.
    • (2002) Mat Sci Eng B , vol.89 , pp. 2-9
    • Masini, G.1    Colace, L.2    Assanto, G.3
  • 5
    • 14344256360 scopus 로고    scopus 로고
    • Silicon shines on
    • Faist J: Silicon shines on. Nature 2005, 433:691-692.
    • (2005) Nature , vol.433 , pp. 691-692
    • Faist, J.1
  • 6
    • 0034707031 scopus 로고    scopus 로고
    • Gaining light from silicon
    • Canham LT: Gaining light from silicon. Nature 2000, 408:411-412.
    • (2000) Nature , vol.408 , pp. 411-412
    • Canham, L.T.1
  • 7
    • 0037325187 scopus 로고    scopus 로고
    • Seeking a silicon laser
    • Anscombe N: Seeking a silicon laser. Photon Spectra 2003, 37:62-69.
    • (2003) Photon Spectra , vol.37 , pp. 62-69
    • Anscombe, N.1
  • 8
    • 0006028206 scopus 로고    scopus 로고
    • Erbium-doped silicon and porous silicon for optoelectronics
    • Reed G, Kewell A: Erbium-doped silicon and porous silicon for optoelectronics. Mat Sci Eng B 1996, 40:207-215.
    • (1996) Mat Sci Eng B , vol.40 , pp. 207-215
    • Reed, G.1    Kewell, A.2
  • 10
    • 0005976398 scopus 로고
    • The erbiumimpurity interaction and its effect on the 1.54 μm luminescence of Er3+ in crystalline silicon
    • Priolo F, Franzò G, Coffa S, Polman A, Libertino S, Barklie R, Carey D: The erbiumimpurity interaction and its effect on the 1.54 μm luminescence of Er3+ in crystalline silicon. J Appl Phys 1995, 78:3874-3882.
    • (1995) J Appl Phys , vol.78 , pp. 3874-3882
    • Priolo, F.1    Franzò, G.2    Coffa, S.3    Polman, A.4    Libertino, S.5    Barklie, R.6    Carey, D.7
  • 13
    • 33750364342 scopus 로고    scopus 로고
    • An analysis of erbium excited state absorption in silicon-rich silica
    • Kenyon AJ, Loh WH, Oton CJ, Ahmad I: An analysis of erbium excited state absorption in silicon-rich silica. J Lum 2006, 121:193-198.
    • (2006) J Lum , vol.121 , pp. 193-198
    • Kenyon, A.J.1    Loh, W.H.2    Oton, C.J.3    Ahmad, I.4
  • 15
    • 0035981019 scopus 로고    scopus 로고
    • Optical gain at 1.54 μm in erbium-doped silicon nanocluster sensitized waveguide
    • Han H-S, Seo S-Y, Shin JH: Optical gain at 1.54 μm in erbium-doped silicon nanocluster sensitized waveguide. Appl Phys Lett 2001, 79:4568.
    • (2001) Appl Phys Lett , vol.79 , pp. 4568
    • Han, H.-S.1    Seo, S.-Y.2    Shin, J.H.3
  • 16
    • 84885757292 scopus 로고
    • Electrolytic shaping of germanium and silicon
    • Uhlir A: Electrolytic shaping of germanium and silicon. Bell Syst Tech J 1956, 35:333-347.
    • (1956) Bell Syst Tech J , vol.35 , pp. 333-347
    • Uhlir, A.1
  • 17
    • 0141775174 scopus 로고
    • Silicon quantum wire array fabrication by electrochemical and chemical dissolution of wafers
    • Canham LT: Silicon quantum wire array fabrication by electrochemical and chemical dissolution of wafers. Appl Phys Lett 1990, 57:1046.
    • (1990) Appl Phys Lett , vol.57 , pp. 1046
    • Canham, L.T.1
  • 19
    • 0030564811 scopus 로고    scopus 로고
    • Progress towards silicon optoelectronics using porous silicon technology
    • Canham LT, Cox TI, Loni A, Simons AJ: Progress towards silicon optoelectronics using porous silicon technology. Appl Surf Sci 1996, 102:436-441.
    • (1996) Appl Surf Sci , vol.102 , pp. 436-441
    • Canham, L.T.1    Cox, T.I.2    Loni, A.3    Simons, A.J.4
  • 21
    • 0032607681 scopus 로고    scopus 로고
    • Tunable, narrow, and directional luminescence from porous silicon light emitting devices
    • Chan S, Fauchet PM: Tunable, narrow, and directional luminescence from porous silicon light emitting devices. Appl Phys Lett 1999, 75:274-276.
    • (1999) Appl Phys Lett , vol.75 , pp. 274-276
    • Chan, S.1    Fauchet, P.M.2
  • 23
    • 13444292314 scopus 로고    scopus 로고
    • Photoluminescence from erbium incorporated in oxidized porous silicon
    • Bondarenko V, Kazuchits N, Balucani M, Ferrari A: Photoluminescence from erbium incorporated in oxidized porous silicon. Opt Mater 2005, 27:894-899.
    • (2005) Opt Mater , vol.27 , pp. 894-899
    • Bondarenko, V.1    Kazuchits, N.2    Balucani, M.3    Ferrari, A.4
  • 24
    • 9744253733 scopus 로고    scopus 로고
    • Optical properties of erbium-implanted porous silicon microcavities
    • Reece PJ, Gal M, Tan HH, Jagadish C: Optical properties of erbium-implanted porous silicon microcavities. Appl Phys Lett 2004, 85:3363.
    • (2004) Appl Phys Lett , vol.85 , pp. 3363
    • Reece, P.J.1    Gal, M.2    Tan, H.H.3    Jagadish, C.4
  • 25
    • 0000572591 scopus 로고    scopus 로고
    • Erbium emission from porous silicon one-dimensional photonic band gap structures
    • Lopez HA, Fauchet PM: Erbium emission from porous silicon one-dimensional photonic band gap structures. Appl Phys Lett 2000, 77:3704.
    • (2000) Appl Phys Lett , vol.77 , pp. 3704
    • Lopez, H.A.1    Fauchet, P.M.2
  • 27
    • 33751079887 scopus 로고    scopus 로고
    • Demonstration of an erbium-doped microdisk laser on a silicon chip
    • Kippenber T, Kalkman J, Polman A, Vahala K: Demonstration of an erbium-doped microdisk laser on a silicon chip. Phys Rev A 2006, 74:051802(R). 1-4.
    • (2006) Phys Rev A , vol.74 , pp. 1-4
    • Kippenber, T.1    Kalkman, J.2    Polman, A.3    Vahala, K.4
  • 29
    • 0033882318 scopus 로고    scopus 로고
    • On the morphology and the electrochemical formation mechanism of mesoporous silicon
    • Lehmann V, Stengl R, Luigart A: On the morphology and the electrochemical formation mechanism of mesoporous silicon. Mat Sci Eng B 2000, 69-70:11-22.
    • (2000) Mat Sci Eng B , vol.69 , pp. 11-22
    • Lehmann, V.1    Stengl, R.2    Luigart, A.3
  • 30
    • 77951093241 scopus 로고    scopus 로고
    • Effect of oxidation level of n+-type mesoporous silicon surface on the adsorption and the catalytic activity of Candida rugosa lipase
    • Salis A, Cugia F, Setzu S, Mula G, Monduzzi M: Effect of oxidation level of n+-type mesoporous silicon surface on the adsorption and the catalytic activity of Candida rugosa lipase. J Colloid Interface Sci 2010, 345:448-453.
    • (2010) J Colloid Interface Sci , vol.345 , pp. 448-453
    • Salis, A.1    Cugia, F.2    Setzu, S.3    Mula, G.4    Monduzzi, M.5
  • 33
    • 23944509044 scopus 로고    scopus 로고
    • Biosensing using porous silicon double-layer interferometers: Reflective interferometric Fourier transform spectroscopy
    • Pacholski C, Sartor M, Sailor MJ, Cunin F, Miskelly GM: Biosensing using porous silicon double-layer interferometers: reflective interferometric Fourier transform spectroscopy. J Am Chem Soc 2005, 127:11636-11645.
    • (2005) J Am Chem Soc , vol.127 , pp. 11636-11645
    • Pacholski, C.1    Sartor, M.2    Sailor, M.J.3    Cunin, F.4    Miskelly, G.M.5


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.