Preparation and characterization of Sn-doped β-Ga2O3 homoepitaxial films by MOCVD

Journal of Materials Science

Volumn 50, Issue 8, 2015, Pages 3252-3257

  Du, Xuejian ^a   Li, Zhao ^a   Luan, Caina ^a   Wang, Weiguang ^a   Wang, Mingxian ^a   Feng, Xianjin ^a   Xiao, Hongdi ^a   Ma, Jin ^a  

^a SHANDONG UNIVERSITY   (China)

Author keywords

[No Author keywords available]

Indexed keywords

ENERGY GAP; FILM PREPARATION; GALLIUM ALLOYS; GALLIUM COMPOUNDS; HALL MOBILITY; METALLORGANIC CHEMICAL VAPOR DEPOSITION; ORGANIC CHEMICALS; ORGANOMETALLICS; OXIDE FILMS; TIN COMPOUNDS;

FILM RESISTIVITY; GALLIUM OXIDES; HOMOEPITAXIAL FILMS; MOBILITY VALUE; ORDERS OF MAGNITUDE; PHOTOELECTRIC PROPERTY; SN CONCENTRATION; UV WAVELENGTH RANGES;

SEMICONDUCTOR DOPING;

EID: 84940098888     PISSN: 00222461     EISSN: 15734803     Source Type: Journal    
DOI: 10.1007/s10853-015-8893-4     Document Type: Article

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