Vertical Graphene Growth from Amorphous Carbon Films Using Oxidizing Gases

Journal of Physical Chemistry C

Volumn 119, Issue 31, 2015, Pages 17965-17970

  Bachmatiuk, Alicja ^a,b   Boeckl, John ^c   Smith, Howard ^c,d   Ibrahim, Imad ^b,e   Gemming, Thomas ^b,e   Oswald, Steffen ^b   Kazmierczak, Wojciech ^e,f   Makarov, Denys ^b   Schmidt, Oliver G ^b   Eckert, Juergen ^b,e   Fu, Lei ^g   Rummeli, Mark H ^h  

^a CENTRE OF POLYMER AND CARBON MATERIALS   (Poland)

^b IFW DRESDEN   (Germany)

^c AIR FORCE RESEARCH LABORATORY   (United States)

^d UNIVERSITY OF DAYTON RESEARCH INSTITUTE   (United States)

^e DRESDEN UNIVERSITY OF TECHNOLOGY   (Germany)

^f Labsoft Krzysztof Herman   (Poland)

^g WUHAN UNIVERSITY   (China)

^h Sungkyunkwan University   (South Korea)

Author keywords

[No Author keywords available]

Indexed keywords

AMORPHOUS CARBON; AMORPHOUS FILMS; AMORPHOUS MATERIALS; CORROSION RESISTANCE; CRYSTALLITES; FILMS; GRAPHENE; IONIZATION OF GASES; LITHOGRAPHY; SEMICONDUCTOR DEVICE MANUFACTURE; THIN FILMS;

AMORPHOUS CARBON THIN FILMS; ANNEALING TEMPERATURES; CORROSION-RESISTANT; DEVICE FABRICATIONS; GRAPHENE LAYERS; GRAPHITIZATION PROCESS; HIGH TEMPERATURE; SEMICONDUCTOR INDUSTRY;

CARBON FILMS;

EID: 84938789289     PISSN: 19327447     EISSN: 19327455     Source Type: Journal    
DOI: 10.1021/acs.jpcc.5b05167     Document Type: Article

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