Gating a single-molecule transistor with individual atoms

Nature Physics

Volumn 11, Issue 8, 2015, Pages 640-644

  Martínez Blanco, Jesús ^a   Nacci, Christophe ^a   Erwin, Steven C ^b   Kanisawa, Kiyoshi ^c   Locane, Elina ^d   Thomas, Mark ^d   Von Oppen, Felix ^d   Brouwer, Piet W ^d   Fölsch, Stefan ^a  

^a PAUL DRUDE INSTITUT FÜR FESTKÖRPERELEKTRONIK   (Germany)

^b NAVAL RESEARCH LABORATORY   (United States)

^c NTT Basic Research Laboratories   (Japan)

^d FREIE UNIVERSITÄT BERLIN   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

ATOMS; CONFORMATIONS; DEGREES OF FREEDOM (MECHANICS); ELECTRON TRANSPORT PROPERTIES; ELECTRON TUNNELING; MOLECULES;

CONFORMATIONAL DEGREES OF FREEDOM; DEGREE OF CONTROL; MOLECULAR TRANSISTORS; SINGLE-ELECTRON TRANSPORT; SINGLE-ELECTRON TUNNELLING; SINGLE-MOLECULE TRANSISTOR; SOURCE AND DRAINS; TOP DOWN APPROACHES;

SINGLE ELECTRON TRANSISTORS;

EID: 84938506876     PISSN: 17452473     EISSN: 17452481     Source Type: Journal    
DOI: 10.1038/nphys3385     Document Type: Article

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