Carrier lifetimes and interface recombination velocities in CdTe/MgxCd1-xTe double heterostructures with different Mg compositions grown by molecular beam epitaxy

Applied Physics Letters

Volumn 107, Issue 4, 2015, Pages

  Liu, Shi ^a   Zhao, Xin Hao ^a   Campbell, Calli M ^a   Lassise, Maxwell B ^a   Zhao, Yuan ^a   Zhang, Yong Hang ^a  

^a Arizona State University   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CADMIUM TELLURIDE; CARRIER LIFETIME; FIELD EFFECT TRANSISTORS; GALLIUM ARSENIDE; III-V SEMICONDUCTORS; MAGNESIUM; MOLECULAR BEAM EPITAXY; SEMICONDUCTOR ALLOYS; THERMIONIC EMISSION;

CARRIER ESCAPES; CDTE LAYERS; DOUBLE HETEROSTRUCTURES; GAAS/ALGAAS; INTERFACE RECOMBINATION VELOCITY; RECOMBINATION PROCESS; TIME-RESOLVED PHOTOLUMINESCENCE;

II-VI SEMICONDUCTORS;

EID: 84938341605     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.4927757     Document Type: Article

References (20)

1. R. J. Nelson and R. G. Sobers, Appl. Phys. Lett. 32, 761 (1978). 10.1063/1.89921
2. L. W. Molenkamp and H. F. J. van't Blik, J. Appl. Phys. 64, 4253 (1988). 10.1063/1.341298
3. J. M. Olson, R. K. Ahrenkiel, D. J. Dunlavy, B. Keyes, and A. E. Kibbler, Appl. Phys. Lett. 55, 1208 (1989). 10.1063/1.101656
4. D. Kuciauskas, A. Kanevce, J. M. Burst, J. N. Duenow, R. Dhere, D. S. Albin, D. H. Levi, and R. K. Ahrenkiel, IEEE J. Photovoltaics 3, 1319 (2013). 10.1109/JPHOTOV.2013.2270354
5. R. Cohen, V. Lyahovitskaya, E. Poles, A. Liu, and Y. Rosenwaks, Appl. Phys. Lett. 73, 1400 (1998). 10.1063/1.122169
6. M. O. Reese, J. M. Burst, C. L. Perkins, A. Kanevce, S. W. Johnston, D. Kuciauskas, T. M. Barnes, and W. K. Metzger, IEEE J. Photovoltaics 5, 382 (2015). 10.1109/JPHOTOV.2014.2362298
7. K. W. Mitchell, A. L. Fahrenbruch, and R. H. Bube, J. Appl. Phys. 48, 4365 (1977). 10.1063/1.323429
8. E. Marín, J. Santoyo, A. Calderón, O. Vigil-Galán, and G. Contreras-Puente, J. Appl. Phys. 107, 123701 (2010). 10.1063/1.3431534
9. M. J. DiNezza, X.-H. Zhao, S. Liu, A. P. Kirk, and Y.-H. Zhang, Appl. Phys. Lett. 103, 193901 (2013). 10.1063/1.4828984
10. X.-H. Zhao, M. J. DiNezza, S. Liu, S. Lin, Y. Zhao, and Y.-H. Zhang, J. Vac. Sci. Technol., B 32, 040601 (2014). 10.1116/1.4878317
11. X.-H. Zhao, M. J. DiNezza, S. Liu, C. M. Campbell, Y. Zhao, and Y.-H. Zhang, Appl. Phys. Lett. 105, 252101 (2014). 10.1063/1.4904993
12. S. Liu, X.-H. Zhao, C. Campbell, M. J. DiNezza, Y. Zhao, and Y.-H. Zhang, J. Vac. Sci. Technol., B 33, 011207 (2015). 10.1116/1.4905289
13. C. H. Swartz, M. Edirisooriya, E. G. LeBlanc, O. C. Noriega, P. A. R. D. Jayathilaka, O. S. Ogedengbe, B. L. Hancock, M. Holtz, T. H. Myers, and K. N. Zaunbrecher, Appl. Phys. Lett. 105, 222107 (2014). 10.1063/1.4902926
14. H. A. Bethe, MIT Radiat. Lab. Rep. 43, 12 (1942).
15. S. M. Sze and K. K. Ng, Physics of Semiconductor Devices 3rd ed. (John Wiley and Sons, Hoboken, NJ, 2007), p. 47.
16. H. Schneider and K. V. Klitzing, Phys. Rev. B 38, 6160 (1988). 10.1103/PhysRevB.38.6160
17. J.-B. Wang, S. R. Johnson, D. Ding, S.-Q. Yu, and Y.-H. Zhang, J. Appl. Phys. 100, 043502 (2006). 10.1063/1.2219323
18. M. A. Steiner, J. F. Geisz, I. Garcia, D. J. Friedman, A. Duda, and S. R. Kurtz, J. Appl. Phys. 113, 123109 (2013). 10.1063/1.4798267
19. B. Kuhn-Heinrich, W. Ossau, H. Heinke, F. Fischer, T. Litz, A. Waag, and G. Landwehr, Appl. Phys. Lett. 63, 2932 (1993). 10.1063/1.110277
20. A. Waag, F. Fischer, Th. Litz, B. Kuhn-Heinrich, U. Zehnder, W. Ossau, W. Spahn, H. Heinke, and G. Landwehr, J. Cryst. Growth 138, 155 (1994). 10.1016/0022-0248(94)90798-6