Influence of the thiourea/CdCl2 concentration ratio used for the chemical bath deposition of CdS thin films, upon the CdS/CdTe interface recombination velocity in CdTe/CdS/glass structures.

Journal of Applied Physics

Volumn 107, Issue 12, 2010, Pages

  Marin E ^a   Santoyo, J ^a   Calderon A ^a   Vigil Galan O ^a   Contreras Puente, G ^a  

^a INSTITUTO POLITÉCNICO NACIONAL   (Mexico)

Author keywords

[No Author keywords available]

Indexed keywords

CDS; CDS THIN FILMS; CDS/CDTE; CDTE LAYERS; CHEMICAL-BATH DEPOSITION; CONCENTRATION RATIO; DEPOSITION SOLUTION; ELECTRICAL MEASUREMENT; GLASS SUBSTRATES; GOOD CORRELATIONS; HEAT TRANSMISSION CONFIGURATION; HOT WALL; INTERFACE RECOMBINATION VELOCITY; MINIMAL VALUE; MINORITY CARRIER; RECOMBINATION VELOCITY; THEORETICAL MODELS;

CADMIUM ALLOYS; CADMIUM SULFIDE; DATA PROCESSING; DATA STORAGE EQUIPMENT; DEPOSITION; ENERGY TRANSFER; SOLAR CONCENTRATORS; SUBSTRATES; THIN FILMS; VAPOR DEPOSITION; VELOCITY;

CADMIUM COMPOUNDS;

EID: 77954202111     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.3431534     Document Type: Article

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