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Volumn 118, Issue 2, 2015, Pages

Enhanced p-type dopability of P and As in CdTe using non-equilibrium thermal processing

Author keywords

[No Author keywords available]

Indexed keywords

CADMIUM TELLURIDE; CALCULATIONS; FERMI LEVEL; HOLE CONCENTRATION; OPEN CIRCUIT VOLTAGE; SEMICONDUCTOR DOPING; TEMPERATURE;

EID: 84937113374     PISSN: 00218979     EISSN: 10897550     Source Type: Journal    
DOI: 10.1063/1.4926748     Document Type: Article
Times cited : (75)

References (46)
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    • (1987) Sol. Cells , vol.21 , pp. 399
    • Fanrenbruch, A.1
  • 32
    • 0042113153 scopus 로고
    • W. Kohn and L. J. Sham, Phys. Rev. 140, A1133 (1965). 10.1103/PhysRev.140.A1133
    • (1965) Phys. Rev. , vol.140 , pp. A1133
    • Kohn, W.1    Sham, L.J.2
  • 42
    • 0001058746 scopus 로고    scopus 로고
    • D. J. Chadi, Phys. Rev. B 59, 15181 (1999). 10.1103/PhysRevB.59.15181
    • (1999) Phys. Rev. B , vol.59 , pp. 15181
    • Chadi, D.J.1


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.