Reduction of Fermi level pinning and recombination at polycrystalline CdTe surfaces by laser irradiation

Journal of Applied Physics

Volumn 117, Issue 22, 2015, Pages

  Simonds, Brian J ^a   Kheraj, Vipul ^a,b   Palekis, Vasilios ^c   Ferekides, Christos ^c   Scarpulla, Michael A ^a,d  

^a University of Utah   (United States)

^b SARDAR VALLABHBHAI NATIONAL INSTITUTE OF TECHNOLOGY   (India)

^c UNIVERSITY OF SOUTH FLORIDA   (United States)

^d UNIVERSITY OF UTAH   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CONTINUOUS WAVE LASERS; ELECTRONIC PROPERTIES; FERMI LEVEL; IRRADIATION; PHOTOLUMINESCENCE; SURFACE DEFECTS;

CAPITAL-EXPENDITURE COSTS; FERMI LEVEL PINNING; FREQUENCY DEPENDENCE; LOW TEMPERATURES; MODULE MANUFACTURING; SPACE CHARGE REGIONS; SURFACE PHOTOVOLTAGE SPECTROSCOPY; TIME-RESOLVED PHOTOLUMINESCENCE;

CADMIUM TELLURIDE;

EID: 84935912866     PISSN: 00218979     EISSN: 10897550     Source Type: Journal    
DOI: 10.1063/1.4921950     Document Type: Article

References (34)

1. M. Woodhouse, A. Goodrich, M. Redlinger, M. Lokanc, and R. Eggert, in The present, mid-term, and long-term supply curves for tellurium; and updates in the results from NREL's CdTe PV module manufacturing cost model, Golden, CO, 2013, Paper No. NREL/PR-6A20-60430.
2. A. L. Dawar, C. Jagadish, K. V. Ferdinand, A. Kumar, and P. C. Mathur, Appl. Surf. Sci. 22-23, 846 (1985). 10.1016/0378-5963(85)90218-1
3. K. M. Rickey, Q. Nian, G. Zhang, L. Chen, S. V. Bhat, Y. Wu, G. Cheng, and X. Ruan, Proc. SPIE 8465, 846505 (2012) 10.1117/12.929965.
4. N.-H. Kim, C. Il Park, and J. Park, J. Korean Phys. Soc. 62, 502 (2013). 10.3938/jkps.62.502
5. B. J. Simonds, V. Palekis, B. Van Devener, C. Ferekides, and M. A. Scarpulla, Appl. Phys. Lett. 104, 141604 (2014). 10.1063/1.4870838
6. B. J. Simonds, V. Palekis, B. Van Devener, C. Ferekides, and M. A. Scarpulla, J. Appl. Phys. 116, 013506 (2014) 10.1063/1.4887079.
7. B. J. Simonds, H. J. Meadows, S. Misra, C. Ferekides, P. J. Dale, and M. A. Scarpulla, J. Photonics Energy 5, 050999 (2015). 10.1117/1.JPE.5.050999
8. C. S. Ferekides, D. Marinskiy, V. Viswanathan, B. Tetali, V. Palekis, P. Selvaraj, and D. L. Morel, Thin Solid Films 361, 520 (2000). 10.1016/S0040-6090(99)00824-X
9. B. J. Simonds, S. Misra, N. Paudel, K. Vandewal, A. Salleo, C. Ferekides, and M. A. Scarpulla, Proc. SPIE 9180, Laser Processing and Fabrication for Solar, Displays, and Optoelectronic Devices III, 91800F (October 8, 2014) 10.1117/12.2062178.
10. S. Datta, S. Ghosh, and B. M. Arora, Rev. Sci. Instrum. 72, 177 (2001). 10.1063/1.1332114
11. L. Kronik and Y. Shapira, Surf. Sci. Rep. 37, 1 (1999). 10.1016/S0167-5729(99)00002-3
12. D. Cavalcoli and A. Cavallini, Phys. Status Solidi 7, 1293 (2010). 10.1002/pssc.200983124
13. D. K. Schroder, Semiconductor Material and Device Characterization, 3rd ed. (John Wiley & Sons, Ltd., Hoboken, NJ, 2006), pp. 404-411.
14. J. Toušek, D. Kindl, and J. Toušková, Sol. Energy Mater. Sol. Cells 64, 29 (2000). 10.1016/S0927-0248(00)00039-8
15. J. Toušek, D. Kindl, J. Toušková, S. Dolhov, and A. Poruba, J. Appl. Phys. 89, 460 (2001). 10.1063/1.1332418
16. S. A. Ringel, A. W. Smith, M. H. MacDougal, and A. Rohatgi, J. Appl. Phys. 70, 881 (1991). 10.1063/1.349652
17. A. Cavallini, A. Castaldini, D. Cavalcoli, and B. Fraboni, IEEE Trans. Nucl. Sci. 54, 1719 (2007). 10.1109/TNS.2007.905171
18. S. Kuzminski and A. T. Szaynok, Phys. Status Solidi 89, 623 (1985). 10.1002/pssa.2210890224
19. J. W. Orton and P. Blood, The Electrical Characterization of Semiconductors: Measurement of Minority Carrier Properties (Academic Press, Inc., San Diego, CA, 1990), pp. 125-127.
20. T. K. Sharma, S. Kumar, and K. C. Rustagi, J. Appl. Phys. 92, 5959 (2002). 10.1063/1.1513203
21. P. Wuerfel, Physics of Solar Cells (Wiley-VCH Verlag GmbH & Co, Weinheim, Germany, 2009), p. 106.
22. V. Donchev, T. Ivanov, K. Germanova, and K. Kirilov, Trends Appl. Spectrosc. 8, 27 (2010).
23. T. Ivanov, V. Donchev, K. Germanova, and K. Kirilov, J. Phys. D: Appl. Phys. 42, 135302 (2009). 10.1088/0022-3727/42/13/135302
24. D. P. Halliday, J. M. Eggleston, and K. Durose, J. Cryst. Growth 186, 543 (1998). 10.1016/S0022-0248(97)00819-1
25. V. Consonni, G. Feuillet, and S. Renet, J. Appl. Phys. 99, 053502 (2006). 10.1063/1.2174117
26. S. Vatavu, H. Zhao, I. Caraman, P. Gasin, and C. Ferekides, Thin Solid Films 519, 7176 (2011). 10.1016/j.tsf.2011.01.372
27. S. Vatavu, H. Zhao, V. Padma, R. Rudaraju, D. L. Morel, P. Gasin, I. Caraman, and C. S. Ferekides, Thin Solid Films 515, 6107 (2007). 10.1016/j.tsf.2006.12.108
28. P. J. Roland, N. R. Paudel, C. Xiao, Y. Yan, and R. J. Ellingson, Proceedings of IEEE 40th Photovoltaic Specialist Conference (PVSC), 3266 (2014), available at http://ieeexplore.ieee.org/xpl/login.jsp?tp=&arnumber=6925633&url=http%3A%2F%2Fieeexplore.ieee.org%2Fstamp%2Fstamp.jsp%3Farnumber%3D6925633.
29. J. Krustok, V. Valdna, K. Hjelt, and H. Collan, J. Appl. Phys. 80, 1757 (1996). 10.1063/1.362981
30. C. Kraft, H. Metzner, M. Haüdrich, U. Reisloühner, P. Schley, G. Gobsch, and R. Goldhahn, J. Appl. Phys. 108, 124503 (2010). 10.1063/1.3517436
31. V. Consonni and G. Feuillet, J. Appl. Phys. 105, 083535 (2009). 10.1063/1.3112019
32. E. S. Barnard, E. T. Hoke, S. T. Connor, J. R. Groves, T. Kuykendall, Z. Yan, E. C. Samulon, E. D. Bourret-Courchesne, S. Aloni, P. J. Schuck, C. H. Peters, and B. E. Hardin, Sci. Rep. 3, 2098 (2013). 10.1038/srep02098
33. D. H. Levi, H. R. Moutinho, F. S. Hasoon, B. M. Keyes, R. K. Ahrenkiel, M. M. Al-Jassim, L. L. Kazmerski, and R. W. Birkwire, Sol. Energy Mater. Sol. Cells 41-42, 381 (1996). 10.1016/0927-0248(95)00110-7
34. J. Pankove, Optical Properties of Semiconductors (Dover Publications, Inc., Mineola, NY, 1971), pp. 108-111.