Micro through nanostructure investigations of polycrystalline CdTe: Correlations with processing and electronic structures

Solar Energy Materials and Solar Cells

Volumn 41-42, Issue , 1996, Pages 381-393

  Levi, D H ^a   Moutinho, H R ^a   Hasoon, F S ^a   Keyes, B M ^a   Ahrenkiel, R K ^a   Al Jassim, M ^a   Kazmerski, L L ^a   Birkmire, R W ^b  

^a NATIONAL RENEWABLE ENERGY LABORATORY   (United States)

^b UNIVERSITY OF DELAWARE   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ATOMIC FORCE MICROSCOPY; CADMIUM ALLOYS; DEPOSITION; ELECTRONIC STRUCTURE; ENERGY GAP; HEAT TREATMENT; MICROELECTRONIC PROCESSING; NANOSTRUCTURED MATERIALS; OPTICAL PROPERTIES; PHOTOLUMINESCENCE; SCANNING ELECTRON MICROSCOPY; SCANNING TUNNELING MICROSCOPY;

DEFECT DENSITY; PHOTOEXCITED CARRIER LIFETIME; PROXIMAL PROBE MEASUREMENTS;

THIN FILMS;

EID: 0030164784     PISSN: 09270248     EISSN: None     Source Type: Journal    
DOI: 10.1016/0927-0248(95)00110-7     Document Type: Article

References (29)

1. C. Ferekides, J. Britt, Y. Ma and L. Killian, 23rd IEEE Photovoltaic Specialists Conf., 1993, p. 389.
2. A.J. Nelson, F. Hasoon and D. Levi, J. Vac. Sci. Technol. A12(5) (1994) 2803.
3. J. Frommer and E. Meyer, J. Phys.: Condens. Matter 3 (1991) S1.
4. T.L. Chu, S.S. Chu, J. Britt, C. Ferekides, C. Wang, C.Q. Wu and H.S. Ullal, IEEE Electron Dev. Lett. 13 (1992) 303.
5. S. Albright, B. Ackerman and J.F. Jordan, IEEE Trans. Electron. Dev. 37 (1990) 434.
6. B.N. Baron, R.W. Birkmire, J.E. Phillips, W.N. Shafarman, S.S. Hegedus and B.E. McCandless, Tech. Rpt., Contract No. XL-9-19032-1, SERI, Golden, CO, 1990.
7. R.K. Ahrenkiel, D.J. Dunlavy and T. Hanak, Solar Cells 24 (1988) 339.
8. AFM microprobe results on the same set of samples which were reported earlier describe microscopic craters formed by apparent explosions of gas trapped below the surface in RFS materials. For more details see: H.R. Moutinho, F.S. Hasoon, F. Abulfotuh and L.L. Kazmerski Proc. 1994 AVS Symposium, in press.
9. R.K. Ahrenkiel, B.M. Keyes, L. Wang and S.P. Albright, 22nd IEEE Photovoltaic Specialists Conf., 1991, p. 940.
10. T.H. Myers, J.F. Schetzina, S.T. Edwards and A.F. Schreiner, J. Appl. Phys. 54(7) (1993) 4232.
11. For a complete discussion of this effect see, e.g., J.I. Pankove, Optical Processes in Semiconductors (Dover, New York, NY, 1971) Ch. 6.
12. R. Hill and D. Richardson, Thin Solid Films 18 (1973) 25.
13. B.E. McCandless and Robert W. Birkmire, Solar Cells 31 (1991) 527.
14. J.A. Dagata, Appl. Phys. Lett. 59 (1991) 3288.
15. S. Gwo, K. J. Chao and B. Streetman, Appl. Phys. Lett. 61 (1992) 1104.
16. R.M. Feenstra, Appl. Phys. Lett. 61 (1992) 795.
17. T. Kato and F. Osaka, Jpn. J. Appl Phys. 30 (1991) L1586.
18. S. Gwo, K. J. Chao, C.K. Shih, D. Sadra and B. Streetman, Phys. Rev. Lett. 71 (1993) 1883.
19. T. Kato and F. Osaka, J. Appl. Phys. 72 (1992) 5716.
20. L.L. Kazmerski, Jpn. J. Appl. Phys. 72 (1992) 5716.
21. R.M. Feenstra and J.A. Stroscio, J. Vac. Sci. Technol. B5 (1987) 923.
22. R.M. Feenstra, J.A. Stroscio, J. Tersoff and J. Fein, Phys. Rev. Lett. 58 (1987) 1192.
23. J.A. Dagata and W. Tseng, Appl. Phys. Lett. 62 (1993) 591.
24. N.D. Lang, Phys. Rev. B34 (1986) 594.
25. J.A. Stroscio, R.M. Feenstra and A.P. Fein, Phys. Rev. Lett. 57 (1986) 2579.
26. A Vaterlaus and R.M. Feenstra, J. Vac. Sci. Technol. B11 (1993) 1502.
27. R.M. Feenstra, in: H.W.M. Salemink (Ed.), Proc. Conf. on Physical Properties of Semicond. Interfaces at Sub-Nanometer Scale (Kluwer, The Netherlands, 1994) pp. 30-39.
28. E.T. Yu, M.B. Johnson and J.-M. Halbout, Appl. Phys. Lett. 61 (1992) 201.
29. M. Contreras, J. Tuttle, D. Du, Y. Qu, A. Swartzlander, A. Tennant and R. Noufi, Appl. Phys. Lett. 44 (1993) 1827.