Frequency and intensity dependence of the sub-band-gap features observed in the surface photovoltage spectrum of semi-insulating GaAs

Journal of Applied Physics

Volumn 92, Issue 10, 2002, Pages 5959-5965

  Sharma, T K ^a   Kumar, Shailendra ^a   Rustagi, K C ^a  

^a RAJA RAMANNA CENTRE FOR ADVANCED TECHNOLOGY   (India)

Author keywords

[No Author keywords available]

Indexed keywords

CHOPPING FREQUENCY; INTENSITY DEPENDENCE; INTENSITY VARIATIONS; SEMI-INSULATING GAAS; SHARP FEATURES; SI-GAAS; SINGLE COMPONENTS; SOURCE INTENSITY; SURFACE PHOTOVOLTAGE SPECTROSCOPY; SURFACE PHOTOVOLTAGE SPECTRUM;

GALLIUM ARSENIDE; SEMICONDUCTING GALLIUM;

ENERGY GAP;

EID: 0037113012     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1513203     Document Type: Article

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