Theoretical and experimental investigation of low-volgage and low-loss 25-Gbps Si photonic crystal slow light Mach–Zehnder modulators with interleaved p/n junction

Frontiers in Physics

Volumn 2, Issue , 2014, Pages 1-9

  Terada, Yosuke ^a   Ito, Hiroyuki ^a   Nguyen, Hong C ^a   Baba, Toshihiko ^a  

^a YOKOHAMA NATIONAL UNIVERSITY   (Japan)

Author keywords

Modulator; Optoelectronics; Photonic crystal waveguides; Silicon photonics; Slow light

Indexed keywords

LASER OPTICS; LIGHT MODULATORS; OPTICAL WAVEGUIDES; PHOTONIC DEVICES; SILICON PHOTONICS; SLOW LIGHT; WAVEGUIDE COMPONENTS;

CRYSTAL WAVEGUIDES; EXPERIMENTAL INVESTIGATIONS; LOW-LOSS; MACH ZEHNDER MODULATOR; MODULATION LOSS; P-N JUNCTION; PERFORMANCE; PHOTONIC CRYSTAL WAVEGUIDE; SILICON PHOTONICS; THEORETICAL INVESTIGATIONS;

PHOTONIC CRYSTALS;

EID: 84935461398     PISSN: None     EISSN: 2296424X     Source Type: Journal    
DOI: 10.3389/fphy.2014.00061     Document Type: Article

References (26)

1. Reed GT, Mashanovich G, Gardes FY, Thomson DJ. Silicon optical modulators. Nat Photonics (2010) 4:518. doi: 10.1038/nphoton.2010.179
2. Zhou G, Geis MW, Spector SJ, Gan F, Grein ME, Schulein RT, et al. Effect of carrier lifetime on forward-biased silicon Mach-Zehnder modulators. Opt Express (2008) 21:11869. doi: 10.1364/OE.16.005218
3. Akiyama S, Imai M, Baba T, Akagawa T, Hirayama N, Noguchi Y, et al. Compact PIN-diode-based silicon modulator using side-wall-grating waveguide. IEEE J Sel Top Quantum Electron. (2014) 19:3401611. doi: 10.1109/JSTQE.2013.2278438
4. Baba T, Akiyama S, Imai M, Hirayama N, Takahashi H, Noguchi Y, et al. 50-Gb/s ring-resonator-based silicon modulator. Opt Express (2013) 21:11869. doi: 10.1364/OE.21.011869
5. Nguyen HC, Sakai Y, Shinkawa M, Ishikura N, Baba T. 10 Gb/s operation of photonic crystal silicon optical modulators. Opt Express (2012) 19:13000. doi: 10.1364/OE.19.013000
6. Timurdogan E, Sorace-Agaskar CM, Sun J, Hosseini S, Biberman A, Watts MR. An ultralow power athermal silicon modulator. Nat Commun. (2014) 5:4008 doi: 10.1038/ncomms5008
7. Xiao X, Xu H, Li X, Hu Y, Xiong K, Li Z, et al. 25 Gbit/s silicon microring modulator based on misalignment-tolerant interleaved PN junctions. Opt Express (2012) 20:2507. doi: 10.1364/OE.20.002507
8. Ding R, Liu Y, Li Q, Yang Y, Ma Y, Padmaraju K, et al. Design and characterization of a 30-GHz bandwidth low-power silicon traveling-wave modulator. Opt Commun. (2014) 321:124. doi: 10.1016/j.optcom.2014.01.071
9. Yang L, Ding J. High-speed silicon Mach-Zehnder optical modulator with large optical bandwidth. J Lightwave Technol. (2014) 32:966. doi: 10.1109/JLT.2013.2295401
10. Xu H, Li X, Xiao X, Li Z, Yu Y, Yu J. Demonstration and characterization of high-speed silicon depletion-mode Mach-Zehnder modulators. IEEE J Sel Top Quantum Electron. (2014) 20:3400110. doi: 10.1109/JSTQE.2013.2293763
11. Kim G, Park JW, Kim IG, Kim S, Jang K, Kim SA, et al. Compact-sized high-modulation-efficiency silicon Mach-Zehnder modulator based on a vertically dipped depletion junction phase shifter for chip-level integration. Opt Lett. (2014) 39:2310. doi: 10.1364/OL.39.002310
12. Marris-Morini D, Baudot C, Fédéli JM, Rasigade G, Vulliet N, Souhaité A, et al. Low loss 40 Gbit/s silicon modulator based on interleaved junctions and fabricated on 300 mm SOI wafers. Opt Express (2013) 21:22471. doi: 10.1364/OE.21.022471
13. Xiao X, Xu H, Li X, Li Z, Chu T, Yu Y, et al. High-speed, low-loss silicon Mach-Zehnder modulators with doping optimization. Opt Express (2013) 21:4116. doi: 10.1364/OE.21.004116
14. Thomson DJ, Gardes FY, Fedeli J, Zlatanovic S, Hu Y, Kuo BPP, et al. 50-Gb/s silicon optical modulator. IEEE Photonics Technol Lett. (2012) 24:234. doi: 10.1109/LPT.2011.2177081
15. Nguyen HC, Sakai Y, Shinkawa M, Ishikura N, Baba T. Photonic crystal silicon optical modulators: carrier-injection and depletion at 10 Gb/s. IEEE J Quantum Electron. (2012) 48:210. doi: 10.1109/JQE.2011.2174338
16. Nguyen HC, Hashimoto S, Shinkawa M, Baba T. Compact and fast photonic crystal silicon optical modulators. Opt Express (2012) 20:22465. doi: 10.1364/OE.20.022465
17. Nguyen HC, Yazawa N, Hashimoto S, Otsuka S, Baba T. Sub-100 μm photonic crystal Si optical modulators: spectral, athermal and high-speed performance. IEEE J Sel Top Quantum Electron. (2013) 19:3400811. doi: 10.1109/JSTQE.2013.2265193
18. Xu H, Xiao X, Li X, Hu Y, Li Z, Chu T, et al. High speed silicon Mach-Zehnder modulator based on interleaved PN junctions. Opt Express (2012) 20:15093. doi: 10.1364/OE.20.015093
19. Yu H, Pantouvaki M, Campenhout JV, Korn D, Komorowska K, Dumon P, et al. Performance tradeoff between lateral and interdigitated doping patterns for high speed carrier-depletion based silicon modulators. Opt Express(2012) 20:12926. doi: 10.1364/OE.20.012926
20. Kim Y, Takenaka M, Osada T, Hata M, Takagi S. Strain-induced enhancement of plasma dispersion effect and free-carrier absorption in SiGe optical modulators. Sci Rep. (2014) 4:4683. doi: 10.1038/srep04683
21. Liu J, Beals M, Pomerene A, Bernardis S, Rong S, Cheng J, et al. Waveguide-integrated, ultra-energy GeSi electro-absorption modulators. Nat Photonics (2008) 2:433. doi: 10.1038/nphoton.2008.99
22. Baba T. Slow light in photonic crystals. Nat Photonics (2008) 2:465. doi: 10.1038/nphoton.2008.146
23. Baba T, Nguyen HC, Ishikura N, Suzuki K, Shinkawa M, Hayakawa R, et al. Photonic crystal slow light devices fabricated by CMOS-compatible process. IEICE Electron Express (2013) 10:1. doi: 10.1587/elex.10.20132002
24. Hamachi Y, Kubo S, Baba T. Slow light with low dispersion and nonlinear enhancement in a lattice-shifted photonic crystal waveguide. Opt Lett. (2009) 34:1072. doi: 10.1364/OL.34.001072
25. Li Z, Xu D, McKinnon WR, Janz S, Schmid JH, Cheben P, et al. Silicon waveguide modulator based on carrier depletion in periodically interleaved PN junctions. Opt Express (2009) 17:15947. doi: 10.1364/OE.17.015947
26. Soref RA, Bennett BR. Electrooptical effects in silicon. IEEE J Quantum Electron. (1987) QE-23:123. doi: 10.1109/JQE.1987.1073206