Low loss 40 Gbit/s silicon modulator based on interleaved junctions and fabricated on 300 mm SOI wafers

Optics Express

Volumn 21, Issue 19, 2013, Pages 22471-22475

  Marris Morini, D ^a   Baudot, C ^b   Fedeli J M ^c   Rasigade, G ^a   Vulliet, N ^c   Souhaite A ^b,c   Ziebell, M ^a   Rivallin, P ^c   Olivier, S ^c   Crozat, P ^a   Le Roux, X ^a   Bouville, D ^a   Menezo, S ^c   Boeuf F ^b   Vivien, L ^a  

^a UNIV PARIS SUD   (France)

^b STMICROELECTRONICS   (France)

^c CEA LETI   (France)

Author keywords

[No Author keywords available]

Indexed keywords

FABRICATION; SILICON WAFERS;

CARRIER DEPLETION; HIGH EXTINCTION RATIOS; MACH-ZEHNDER; MZ MODULATOR; OPERATING POINTS; P-N JUNCTION; RING RESONATOR; SILICON MODULATORS;

LIGHT MODULATORS;

EID: 84884558376     PISSN: None     EISSN: 10944087     Source Type: Journal    
DOI: 10.1364/OE.21.022471     Document Type: Article

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