Enhancing the photocatalytic activity of GaN by electrochemical etching

Materials Research Bulletin

Volumn 70, Issue , 2015, Pages 881-886

  Cao, Dezhong ^a   Xiao, Hongdi ^a   Xu, Hangzhou ^a   Cui, Jishi ^a   Gao, Qingxue ^a   Pei, Haiyan ^a  

^a SHANDONG UNIVERSITY   (China)

Author keywords

Electrochemical etching; Nanoporous GaN; Photocatalytic activity; Porous Si

Indexed keywords

CHEMICAL STABILITY; ENERGY GAP; GALLIUM NITRIDE; LIGHT; PHOTOCATALYSIS; PHOTOCATALYSTS; POROUS SILICON; SILICON; SILICON WAFERS; THIN FILMS;

CHEMICAL INERTNESS; CONCENTRATED SOLAR; DYE PHOTODEGRADATION; HIGH SURFACE-TO-VOLUME RATIO; NANOPOROUS GAN; PHOTOCATALYTIC ACTIVITIES; POROUS SI; VISIBLE LIGHT REGION;

ELECTROCHEMICAL ETCHING;

EID: 84934953407     PISSN: 00255408     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.materresbull.2015.06.025     Document Type: Article

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