Low frequency noise characterization and signal-to-noise ratio optimization for silicon hall cross sensors

IEEE Journal of the Electron Devices Society

Volumn 3, Issue 4, 2015, Pages 365-370

  Zhang, Dongli ^a   Wang, Mingxiang ^a   Sun, Kai ^a  

^a SOOCHOW UNIVERSITY   (China)

Author keywords

1 f; Hall; Noise; Sensors; Signal to Noise Ratio (SNR)

Indexed keywords

HALL EFFECT DEVICES; SENSORS; SILICON; SPECTRAL DENSITY; THERMAL NOISE;

GEOMETRICAL FACTORS; HALL; LOW-FREQUENCY NOISE; NOISE; NOISE VOLTAGE; OPTIMAL DESIGN; SILICON-BASED;

SIGNAL TO NOISE RATIO;

EID: 84933510006     PISSN: None     EISSN: 21686734     Source Type: Journal    
DOI: 10.1109/JEDS.2015.2418794     Document Type: Article

References (16)

1. J. C. Van Der Meer, et al. "CMOS quad spinning-current Hall sensor system for compass application". in Proc. IEEE Sensors, Oct. 2004, pp. 1434-1437
2. A. Ajbl, M. Pastre, and M. Kayal. "A fully integrated Hall sensor microsystem for contactless current measurement". IEEE Sensors J., vol. 13, no. 6, pp. 2271-2278, Jun. 2013
3. C. D. Damsgaard, S. C. Freitas, P. P. Freitas, and M. F. Hansen. "Exchange-biased planar Hall effect sensor optimized for biosensor applications". J. Appl. Phys., vol. 103, Jan. 2008, Art. ID 07A302
4. H. Blanchard. "Hall sensors with integrated magnetic flux concentrators". Ph.D. dissertation, Swiss Federal Inst. Technol. (EPFL), Lausanne, Switzerland, 1999
5. M. Donolato, et al. "Size-dependent effects in exchange-biased planar Hall effect sensor crosses". J. Appl. Phys., vol. 109, Mar. 2011, Art. ID 064511
6. W. Versnel. "Analysis of symmetrical Hall plates with finite contacts". J. Appl. Phys., vol. 52, no. 7, pp. 4659-4666, Jul. 1981
7. R. S. Popovic, Hall Effect Devices, 2nd ed. Bristol, U.K.: Inst. Phys., 2004, pp. 282-286
8. A. Persson, et al. "Low-frequency noise in planar Hall effect bridge sensors". Sensors Actuat. A Phys., vol. 171, no. 2, pp. 212-218, Nov. 2011
9. L. K. J. Vandamme and A. H. de Kuijper. "Conductance noise investigation on symmetrical planar resistors with finite contacts". Solid-State Electron., vol. 22, no. 11, pp. 981-986, Nov. 1979
10. J. Przybytek, V. Mosser, and Y. Haddab. "LF noise in cross Hall effect devices: Geometrical study". Proc. SPIE, vol. 5113, pp. 475-483, May 2003
11. Y. Kanda and M. Migitaka. "Effect of mechanical stress on the offset voltage of Hall devices in Si IC". Solid State Phys. vol. 35, no. 2, pp. K115-K118, Jun. 1976
12. F. N. Hooge. "1/f noise is no surface effect". Phys. Lett. A, vol. 29, no. 3, pp. 139-140, Apr. 1969
13. G. Leroy, J. Gest, L. K. J. Vandamme, and A. P. J. van Deursen. "Analytical expressions for the conductance noise measured with four circular contacts placed in a square array". J. Appl. Phys., vol. 101, no. 6, 2007, Art. ID 063710
14. L. K. J. Vandamme and F. N. Hooge. "What do we certainly know about 1/f noise in MOSTs?" IEEE Trans. Electron Devices, vol. 55, no. 11, pp. 3070-3085, Nov. 2008
15. X. Y. Chen and C. Salm. "Doping dependence of low-frequency noise in polycrystalline SiGe film resistors". Appl. Phys. Lett., vol. 75, pp. 516-518, Jun. 1999
16. L. K. J. Vandamme and S. Oosterhoff. "Annealing of ion-implanted resistors reduces the 1/f noise". J. Appl. Phys., vol. 59, pp. 3169-3174, Jan. 1986