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Applied Physics Letters

Volumn 75, Issue 4, 1999, Pages 516-518

Doping dependence of low-frequency noise in polycrystalline SiGe film resistors

(2) Chen, X Y a Salm, C b

a UNIVERSITY OF TROMSØ (Norway)

b UNIVERSITY OF TWENTE (Netherlands)

Author keywords

[No Author keywords available]

Indexed keywords

CARRIER MOBILITY; CHEMICAL VAPOR DEPOSITION; ION IMPLANTATION; POLYCRYSTALLINE MATERIALS; RESISTORS; SEMICONDUCTING BORON; SEMICONDUCTOR DOPING; SPURIOUS SIGNAL NOISE; THIN FILM DEVICES;

LOW-FREQUENCY NOISE; SILICON GERMANIDE;

SEMICONDUCTING SILICON COMPOUNDS;

EID: 0032614578 PISSN: 00036951 EISSN: None Source Type: Journal
DOI: 10.1063/1.124401 Document Type: Article

Times cited : (8)

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