Measurement of the energy-band relations of stabilized Si photoanodes using operando ambient pressure X-ray photoelectron spectroscopy

ECS Transactions

Volumn 66, Issue 6, 2015, Pages 105-113

  Richter, M H ^a   Lichterman, M F ^a,b   Hu, S ^a,b   Crumlin, E J ^c   Mayer, T ^d   Axnanda, S ^c   Favaro, M ^a,c   Drisdell, W ^a,c   Hussain, Z ^c   Brunschwig, B S ^b,e   Lewis, N S ^a,b,e   Liu, Z ^c,f,g   Lewerenz, H J ^a  

^a CALIFORNIA INSTITUTE OF TECHNOLOGY   (United States)

^b California Institute of Technology   (United States)

^c LAWRENCE BERKELEY NATIONAL LABORATORY   (United States)

^d DARMSTADT UNIVERSITY OF TECHNOLOGY   (Germany)

^e CALIFORNIA INSTITUTE OF TECHNOLOGY   (United States)

^f SHANGHAI INSTITUTE OF MICROSYSTEM AND INFORMATION TECHNOLOGY   (China)

^g SHANGHAITECH UNIVERSITY   (China)

Author keywords

[No Author keywords available]

Indexed keywords

BAND STRUCTURE; ELECTRONIC PROPERTIES; OXIDE MINERALS; PHOTOELECTRONS; PHOTONS; RADIATION PROTECTION; SYNCHROTRON RADIATION; TITANIUM DIOXIDE; X RAY PHOTOELECTRON SPECTROSCOPY;

AMBIENT PRESSURES; AMBIENT-PRESSURE X-RAY PHOTOELECTRON SPECTROSCOPIES; APPLIED POTENTIALS; ELECTROCHEMICAL PARAMETERS; INTERFACE STATE DENSITY; PROTECTION LAYERS; X-RAY PHOTOEMISSIONS; X-RAY SYNCHROTRON RADIATION;

INTERFACE STATES;

EID: 84931068447     PISSN: 19386737     EISSN: 19385862     Source Type: Conference Proceeding    
DOI: 10.1149/06606.0105ecst     Document Type: Conference Paper

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