A study on high frequency-plasma enhanced chemical vapor deposition silicon nitride films for crystalline silicon solar cells

Transactions on Electrical and Electronic Materials

Volumn 12, Issue 4, 2011, Pages 156-159

  Li, Zhen Hua ^a   Roh, Si Cheol ^a   Ryu, Dong Yeol ^a   Choi, Jeong Ho ^a   Seo, Hwa Il ^a   Kim, Yeong Cheol ^a  

^a Korea University of Technology and Education   (South Korea)

Author keywords

High frequency plasma enhanced chemical vapor deposition; Minority carrier lifetime; Refractive index; Silicon nitride; Thickness uniformity

Indexed keywords

CARRIER LIFETIME; CHEMICAL VAPOR DEPOSITION; CRYSTALLINE MATERIALS; FLOW OF GASES; LIGHT REFRACTION; PASSIVATION; PLASMA ENHANCED CHEMICAL VAPOR DEPOSITION; REFRACTIVE INDEX; REFRACTOMETERS; SILICON NITRIDE; SILICON SOLAR CELLS; SILICON WAFERS;

CRYSTALLINE SI; CRYSTALLINE SILICON SOLAR CELLS; DEPOSITION CONDITIONS; FILM DEPOSITION; HIGH FREQUENCY; HIGH FREQUENCY-PLASMA ENHANCED CHEMICAL VAPOR DEPOSITION; MINORITY CARRIER LIFETIMES; PASSIVATION PROPERTIES; RADIO FREQUENCY POWER; SHOWERHEAD; SILICON NITRIDE FILM; THICKNESS UNIFORMITY;

PLASMA DEPOSITION;

EID: 84930473749     PISSN: 12297607     EISSN: 20927592     Source Type: Journal    
DOI: 10.4313/TEEM.2011.12.4.156     Document Type: Article

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