Comparative study of Sb2S3, Bi2S3 and In2S3 thin film deposition on TiO2 by successive ionic layer adsorption and reaction (SILAR) method

Materials Science in Semiconductor Processing

Volumn 37, Issue , 2015, Pages 235-240

  Huerta Flores, Ali M ^a   García Gómez, Nora A ^a   De La Parra, Salomé M ^a   Sánchez, Eduardo M ^a  

^a UNIVERSIDAD AUTÓNOMA DE NUEVO LEÓN   (Mexico)

Author keywords

Antimony sulfide; Bismuth sulfide; Indium sulfide; Optoelectronic properties; Silar method; Thin films

Indexed keywords

ANTIMONY COMPOUNDS; DEPOSITION; INDIUM SULFIDE; LAYERED SEMICONDUCTORS; LIGHT ABSORPTION; OPTICAL FILMS; OPTICAL PROPERTIES; PHOTOELECTROCHEMICAL CELLS; SCANNING ELECTRON MICROSCOPY; SULFUR COMPOUNDS; THIN FILMS; TITANIUM DIOXIDE; X RAY DIFFRACTION;

ANTIMONY SULFIDE; BISMUTH SULFIDE; DIFFUSE REFLECTANCE SPECTROSCOPY; OPTICAL CHARACTERIZATION OF THIN FILMS; OPTOELECTRONIC PROPERTIES; POLYCRYSTALLINE THIN FILM; SILAR METHOD; SUCCESSIVE IONIC LAYER ADSORPTION AND REACTIONS;

BISMUTH COMPOUNDS;

EID: 84930273085     PISSN: 13698001     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.mssp.2015.03.044     Document Type: Article

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