Properties of Sb2S3 and Sb2Se3 thin films obtained by pulsed laser ablation

Semiconductors

Volumn 47, Issue 7, 2013, Pages 1003-1007

  Virt, I S ^a,d   Rudyj, I O ^b   Kurilo, I V ^b   Lopatynskyi, I Ye ^b   Linnik, L F ^c   Tetyorkin, V V ^c   Potera, P ^d   Luka, G ^e  

^a DROHOBYCH IVAN FRANKO STATE PEDAGOGICAL UNIVERSITY   (Ukraine)

^b LVIV POLYTECHNIC NATIONAL UNIVERSITY   (Ukraine)

^c INSTITUTE OF SEMICONDUCTOR PHYSICS   (Ukraine)

^d UNIVERSITY OF RZESZÓW   (Poland)

^e INSTITUTE OF PHYSICS   (Poland)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 84879818330     PISSN: 10637826     EISSN: None     Source Type: Journal    
DOI: 10.1134/S1063782613070233     Document Type: Article

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