Interfacial electronic structure at the CH3NH3PbI3/MoOx interface

Applied Physics Letters

Volumn 106, Issue 19, 2015, Pages

  Liu, Peng ^a   Liu, Xiaoliang ^a   Lyu, Lu ^a   Xie, Haipeng ^a   Zhang, Hong ^a   Niu, Dongmei ^a   Huang, Han ^a   Bi, Cheng ^b   Xiao, Zhengguo ^b   Huang, Jinsong ^b   Gao, Yongli ^c  

^a CENTRAL SOUTH UNIVERSITY   (China)

^b UNIVERSITY OF NEBRASKA LINCOLN   (United States)

^c UNIVERSITY OF ROCHESTER   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

BINDING ENERGY; ELECTRONIC PROPERTIES; ELECTRONIC STRUCTURE; ENERGY GAP; EXTRACTION; LEAD COMPOUNDS; MOLYBDENUM OXIDE; PHOTOELECTRON SPECTROSCOPY; SUBSTRATES; TIN OXIDES;

CONDUCTION BAND EDGE; INTERFACIAL ELECTRONIC STRUCTURE; N-TYPE SEMICONDUCTORS; ORGANIC PHOTOVOLTAIC DEVICES; POLY(STYRENE SULFONATE); POLY-3 ,4-ETHYLENEDIOXYTHIOPHENE; ULTRAVIOLET PHOTOEMISSION SPECTROSCOPY; X RAY PHOTOEMISSION SPECTROSCOPY;

IODINE COMPOUNDS;

EID: 84929598534     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.4921339     Document Type: Article

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